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Method for designing microwave and millimeter-wave spatial power synthesis amplifier

A technology of power combiner and design method, which is applied in the direction of waveguide devices, electrical components, connecting devices, etc., can solve the problems of not being suitable for mass production, complex design and debugging, poor high-order mode suppression, etc., and achieve easy production and large-scale Mass production, conducive to popularization and use, and the effect of large working capacity

Inactive Publication Date: 2013-01-16
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
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Problems solved by technology

The disadvantages are: narrow bandwidth, complex structure, difficult processing, three-dimensional structure, and insufficient output power
Its main disadvantages are: the working mode is complex, and the suppression of high-order modes is poor; when the number of synthesis channels increases, there is difficulty in heat dissipation; it is a three-dimensional structure, and as the frequency increases, the precision requirements for machining increase
Its main disadvantages are: it is a three-dimensional structure, the processing is complicated, and the cost is high; the design and debugging are complicated, and it is not suitable for mass production

Method used

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  • Method for designing microwave and millimeter-wave spatial power synthesis amplifier
  • Method for designing microwave and millimeter-wave spatial power synthesis amplifier
  • Method for designing microwave and millimeter-wave spatial power synthesis amplifier

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Embodiment Construction

[0067] The present invention is described in detail below by taking a 33.5GHz-35.5GHz millimeter-wave space power synthesis amplifier as an example, and the design steps are as follows:

[0068] 1. Substrate integrated waveguide plate selection

[0069] In the design of the substrate-integrated waveguide power synthesis amplifier, the selection of the waveguide plate is the key, not only because it is the carrier of the entire circuit, and the active devices need to be soldered on it, but more importantly, the input and output energy is in the form of The quasi-rectangular metal waveguide mode propagates in its medium, which directly affects key parameters such as insertion loss, transition size, and heat dissipation of active devices in the entire power synthesis amplifier. Based on the above reasons, rogers5880 with a thickness of 0.254mm and a dielectric constant of 2.2 is selected as the substrate for making the substrate-integrated waveguide in this design. The rogers588...

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Abstract

The invention discloses a method for designing a microwave and millimeter-wave spatial power synthesis amplifier. The design method determines the components of the power synthesis amplifier first comprising a power divider, a power amplifier and a power combiner, and then mainly introduces the design method of the power divider according to the characteristics and requirements of the prior art. The power divider is realized mainly by the following steps: a, designing a transition section from a microstrip to a substrate integrated waveguide; b, designing a transition section from the substrate integrated waveguide to a semi-mode substrate integrated waveguide; and c, designing a transition section from the semi-mode substrate integrated waveguide to the microstrip so as to form a multi-channel power divider. Based on the realization of the power divider, the power divider can be used as the power synthesizer by reversing the power divider according to the reversibility of a passive network. Compared with the prior art, the microwave and millimeter-wave spatial power combining amplifier adopts the planar structure design completely, and has the advantages of high combining efficiency, good heat sink performance, simple processing, low cost, high yield and the like.

Description

technical field [0001] The invention relates to a design method of a power synthesis amplifier, in particular to a design method of a microwave millimeter wave space power synthesis amplifier with a substrate integrated waveguide / half-mode substrate integrated waveguide. Background technique [0002] In the field of microwave electronics, semiconductor power devices have attracted much attention due to their small size, light weight, long life and low operating voltage, and are widely used in radar, electronic warfare, military communications and other equipment. The power of a single device is difficult to meet the requirements of high-power military electronic systems due to physical mechanism and manufacturing process limitations. To solve this problem, solid-state power synthesis technology has been studied. [0003] Since the mid-1970s, international researches aimed at improving the output power of microwave and millimeter-wave solid-state power sources have been carr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01P5/12
Inventor 金海焱文光俊金雁冰肖馥林
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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