Novel isolated gate bipolar transistor module distributed with direct coated copper base plates

A technology of bipolar transistors and copper-clad substrates, which is applied in the direction of electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., to achieve the effects of good compatibility, low production cost, and large current range

Active Publication Date: 2011-05-11
STARPOWER SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention is to solve the problems of insufficient compatibility, unreasonable thermal design and high production cost in existing insulated gate bipolar transistor (IGBT) modules

Method used

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  • Novel isolated gate bipolar transistor module distributed with direct coated copper base plates
  • Novel isolated gate bipolar transistor module distributed with direct coated copper base plates
  • Novel isolated gate bipolar transistor module distributed with direct coated copper base plates

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] Among the four direct copper clad substrates (DBC), the upper left direct copper clad substrate (DBC) and the lower right direct copper clad substrate (DBC), the lower left direct copper clad substrate (DBC) and the upper right direct copper clad substrate (DBC) have the same structure. The upper left direct copper clad substrate (DBC) and the lower right direct copper clad substrate (DBC) are mirror symmetric, and the lower left direct copper clad substrate (DBC) and the upper right direct copper clad substrate (DBC) are mirror symmetric.

[0013] The side area of ​​the direct copper clad substrate (DBC) 3 is the gate 9, and the gate 9 is a rectangular area. The gate electrode 9 of the upper left direct copper clad substrate (DBC) and the gate electrode of the lower left direct copper clad substrate (DBC) are connected through a bridge 17 and drawn out through leads. The gate pole of the upper right direct copper clad substrate (DBC) and the gate pole of the lower rig...

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Abstract

The invention discloses a novel isolated gate bipolar transistor module distributed with direct bonded copper base plates, comprising a base plate, the direct bonded copper base plates (DBC), an isolated gate bipolar transistor chip, a diode chip and a power terminal, wherein the base plate is combined with the direct bonded copper base plates (DBC) through braze welding; the isolated gate bipolar transistor chip, the diode chip and the direct bonded copper base plates (DBC) are combined through braze welding; the base plate is combined with the direct bonded copper base plates (DBC) through braze welding, the base plate is brazed with two groups of four direct bonded copper base plates (DBC), and each direct bonded copper base plate (DBC) comprises a gate electrode, a collector electrodeand an emitting electrode. The invention has good compatibility, large applied current range and low cost.

Description

technical field [0001] The invention belongs to the field of semiconductor packaging and power modules, in particular to a novel insulated gate bipolar transistor module with direct copper-clad substrate layout. Background technique [0002] The IGBT module mainly includes a substrate, a direct copper clad substrate (DBC), an IGBT chip, a diode chip and power terminals. When designing the direct copper clad substrate (DBC) in this module, thermal design, structural stress design, EMC design and circuit structure design should be considered, and the production cost of the designed product should also be considered. The main problems existing in the existing IGBT module design are insufficient product compatibility, unreasonable thermal design and high production cost. Contents of the invention [0003] The object of the invention is to design a novel insulated gate bipolar transistor module with a direct copper-clad substrate layout. [0004] The invention aims to solv...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/07H01L23/488H01L23/12
CPCH01L2924/0002
Inventor 刘志宏金晓行姚礼军张宏波沈华
Owner STARPOWER SEMICON
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