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50results about How to "Large current range" patented technology

Electric energy quality harmonic disturbance source platform

The invention relates to an electric energy quality harmonic disturbance source platform. In the disturbance source platform, an input circuit breaker cabinet, a disturbance source input switch cabinet, an output filter and switch cabinet and an output test cabinet are all connected to a 10kV bus; the disturbance source input switch cabinet, an input transformer and unit cabinet, the output filter and switch cabinet, a switch and output transformer cabinet and the output test cabinet are sequentially connected; the output test cabinet, the input transformer and unit cabinet are connected with the input control cabinet; the electric energy quality harmonic disturbance source outputs 0-50 times or stacking folds of standard harmonic voltage current source with adjustable amplitude and phase under the conditions of 10kV and 0.38kV fundamental voltages, and the maximal total harmonic distortion THDu is less than 20%. The platform can be used as a standard electric energy quality harmonic output source and a power grid equipment assessment platform for testing operation stability of a power grid and performance of power grid equipment under the harmonic output condition; electric energy quality problems about sag, fluctuation and three-phase imbalance of the power grid are simulated, and a platform is built for test, analysis and assessment of electric energy quality improvement.
Owner:STATE GRID CORP OF CHINA +2

Self-adaptive current mirror

The invention discloses a self-adaptive current mirror, which is composed of a plurality of sub current mirrors which are connected in series, wherein each sub current mirror comprises an input circuit unit, a plurality of output circuit units, a voltage detection and control unit and a negative feedback impedance regulating unit. The input circuit unit and the output circuit unit are formed by connecting a basic transistor and a standby transistor in parallel, a switch is arranged between the basic transistor and the standby transistor, the transistors are of the same type, have the save threshold voltage and both work in a linear area. The voltage detection and control unit detects the grid voltages of the transistors in the input circuit unit and the output circuit unit, compares the grid voltages with two preset voltage references, controls the on and off of the switch according to the result of the comparison, and controls the on and off of the standby transistor for regulating the range of an output current. In the invention, the range of the output current of the conventional current mirror is expanded, and a high constant current precision is kept within a wide range of the output current.
Owner:苏州日月成科技有限公司

Primary oil electric dehydration energy-saving high power pulse power supply and its generation method

ActiveCN101345492AAvoid smearingImprove voltage regulation accuracyLow voltageCurrent range
The invention relates to an energy saving and large pulse power supply for crude oil electric dehydration and the production method thereof. The large pulse power supply comprises a low voltage dc power supply device outputting a low voltage dc power supply, a large power inversion device inverting the low voltage dc power supply and outputting a bipolar low voltage pulse power supply, a pulse transformer device improving voltage of the bipolar low voltage pulse power supply and outputting a high voltage dc power supply, a pulse switch device making the high voltage dc power supply be a high voltage and high frequency pulse power supply output to a load, a detection device and a control device. Firstly the bipolar low voltage pulse power supply is formed by the treatments of rectification, filter and inversion to the ac power supply, then the high voltage dc power supply is formed by treatments of voltage rise, rectification and filter to the pulse transformer, finally the high voltage and high frequency pulse power supply is formed by crossing the pulse switch with a complementary structure. The energy saving and large pulse power supply of the invention has advantages of frequency modulation, amplitude modulation, pulse width modulation, wide current range, non-harmonic pollution, energy conservation and small size or the like.
Owner:CHINA UNIV OF PETROLEUM (BEIJING) +2

Circuit structure of narrow-pulse-width high-repetition-frequency pulse current source

The invention discloses a circuit structure of a narrow-pulse-width high-repetition-frequency pulse current source. The circuit structure is characterized by comprising an adjustable reference voltage input module (1), a current source module (2), an adjustable narrow pulse generating and shaping module (3), a high-speed selection module (4) and a current mirror module (5), wherein the adjustable reference voltage input module (1), the current source module (2) and the current mirror module (5) are electrically connected in sequence; and the adjustable pulse generating and shaping module (3), the high-speed selection module (4) and the current mirror module (5) are electrically connected in sequence. By adopting the circuit structure, the pulse width, the current magnitude and the pulse frequency can be adjusted. Moreover, the circuit structure has the advantages of narrow pulse width, high repetition frequency, high current, small overshoot and steep leading edge.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI

P-type one time programmable (OTP) device and manufacturing method thereof

The invention discloses a P-type one time programmable (OTP) device. The device is a one time programmable device formed by two P-channel metal oxide semiconductor (PMOS) transistors connected in series, wherein the first PMOS transistor is used as a gate transistor, while the second PMOS transistor is used as a storage unit, and the grid of the second PMOS transistor floats; and the source of the second PMOS transistor comprises a coupling region of the source and the floating gate formed by injection of P-type foreign ions so as to increase the coupling capacitance between the source and the gate of the second PMOS transistor. The invention also discloses a method for manufacturing the P-type OTP device, which is to form a coupling region of the source and the gate by P-type foreign ioninjection in the second PMOS transistor after polycrystalline silicon is etched. In the invention,, the programming performance of the P-type OTP device is ensured to be greatly improved, the conduction current of the whole device can be improved after programming is completed, the differentiable current ranges of the device before and after programming are increased, and the area of a peripheralcircuit for realizing the OTP function can be reduced.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP

Laser back scattering dust-measuring apparatus probe device

The invention discloses a probe device of a laser backscatter dust measuring device, belonging to the technical field of a device for measuring the density of gaseous emissions with laser backscatter. A problem to be solved is to provide the probe device of the laser backscatter dust measuring device. The device is the probe device which uses a laser backscatter measuring principle for online continuously measuring the density of dust particles in stack gas through the measuring device. The adopted proposal is as follows: in the probe device of the laser backscatter dust measuring device, a light barrier device is arranged between protective glass and a receiving lens on the right side of the probe device and a photosensitive cell on the left side of the probe device, and can selectively reflect reference light of a laser through the protective glass or refract returned signal light through the receiving lens. The probe device can be widely applied to various dust measuring technologies.
Owner:SINOGREEN ENVIRONMENTAL PROTECTION SCI & TECH

Improved differential framework Nor flash storage unit based on serially-connected transistor type

The invention discloses an improved differential framework Nor flash storage unit based on a serially-connected transistor type. The improved differential framework Nor flash storage unit comprises a two-transistor serial connection type Nor flash unit composed of a PMOS (P-channel Metal Oxide Semiconductor) transistor and a floating gate transistor, wherein a drain electrode of the floating gate transistor is connected with a source electrode of the PMOS transistor; particularly, one branch composed of the other two-transistor serial connection type Nor flash unit with the same composing structure is additionally arranged to form a differential symmetrical structure; bit lines of the two branches are used as a set of a differential pair to be input into a sensitive amplifier and are compared to read data. According to the improved differential framework Nor flash storage unit, a differential structure is adopted, the size of the transistor is reduced and the quantity of the transistors on the surface is increased for one time; the requirement on the transistors is reduced wholly and the area of the storage unit is not changed greatly; a manufacturing process is compatible with a traditional manufacturing process so that a design difficulty is reduced, low-capability application is realized, the area is reduced and the cost is reduced; with the adoption of a differential input scheme, a standard voltage source does not need to be arranged, so that a differentiable current range is expanded, the ranges of working voltage and temperatures are expanded and the reliability is enhanced.
Owner:SUZHOU KUANWEN ELECTRONICS SCI & TECH

Passive wireless current sensor based on dual-winding current transformer

The invention discloses a passive wireless current sensor based on a dual-winding current transformer. The passive wireless current sensor comprises the dual-winding current transformer, a mutual inductance energy extraction module, an energy storage module, a current sensing module, a signal processing module and a wireless transmitting module, wherein the dual-winding current transformer comprises a primary side winding connected with a tested circuit, and two secondary side windings; and the two secondary side windings are connected with the mutual inductance energy extraction module and the current sensing module respectively. The passive wireless current sensor can be applied to an intelligent power grid electric energy monitoring system, does not need an external power supply systemto provide energy, only uses one transformer for energy collection and current sensing, reduces the size of the system and facilitates installation. The passive wireless current sensor can perform maximum power tracking according to the magnitude of a current measured by means of the current sensing module, greatly improves the power output of the energy extraction module, and reduces the startingcurrent of the system, thereby improving the reliability of the sensor and expanding the use range.
Owner:石家庄杰泰特动力能源有限公司 +1

Gas shielded arc welding method for improving electrical arc self-regulation performance and preventing welding stick from burning back

InactiveCN101239414AImprove self-tuning performanceSmall change in arc lengthArc welding apparatusElectric arcLength change
The invention provides a gas shielded arc welding method for preventing welding wire burning back by enhancing electrical arc self adjusting property. The invention solves the problems in prior art of CO2 gas shielded welding machine which is not adaptable to the fluctuation of wire feed rate, which are welding gun shaking or dry elongation length variety, and unstable arc length during welding, week self adjusting ability of electric arc and burning back of the welding wires. During CO2 gas shielded arc welding process, in initial time when the electric arc voltage rises abnormally by inspecting variety of electric arc voltage, a feedback system of the welding electric source can adjust the output property of the electric welding machine automatically to inhibit increasing of arc length effectively, pause burning back of the welding wire, maintain the stability of the electric arc, prevent appearance of welding wire burning back and non-axial large drop phenomena, enhance self adjusting property of the electric arc with little length changing of electrical arc, maintain stable working of CO2 gas shielded arc welding system, and improve adaptability to destabilization of the welding machine remarkably. Thereby, when working at a same welding voltage, normal welding current range is enlarged, welding conditions are initiated more convenient than before, and an objective of facilitating stable working of CO2 gas shielded welding system is achieved.
Owner:王金

Measurement circuit of direct current

The invention provides a measurement circuit of direct current, comprising a main circuit of the direct current to be measured. In the measurement circuit of direct current, a first conductor is connected with the main circuit in series; one end of a second conductor is connected with the first conductor; the resistance of the first conductor is less than that of the second conductor; the other end of the second conductor is respectively connected with a drain electrode of a first field effect transistor of the measurement circuit of direct current and a positive voltage input end of an operational amplifier; the other end of the first conductor is connected with a negative voltage input end of the operational amplifier of the measurement circuit of direct current; an output end of the operational amplifier is connected with a grid electrode of the first field effect transistor; a source electrode of the first field effect transistor is connected with one end of an amperemeter; and the other end of the amperemeter is connected with the ground of the measurement circuit of direct current. The invention can accurately detect high current, and has low power consumption and large scope of detected current.
Owner:LIBO SHIDAI LITHIUM POWER SCI & TECH BEIJING +1

Low-bubble weak-acid chloride zinc-nickel alloy electroplate liquid

InactiveCN105002532ALow foam on the surfaceImprove wettabilityFiltrationCurrent range
The invention relates to the technical field of zinc-nickel alloy electroplating, in particular to a low-bubble weak-acid chloride zinc-nickel alloy electroplate liquid and aims to solve the technical problems that existing plating solutions cannot be subjected to air agitation operation, the brightness is low and the corrosion resistance is poor. The electroplate liquid comprises components as follows: zinc chloride, nickel chloride, potassium chloride, ammonium chloride, a main brightener, a carrier brightener, a throwing agent and a complexing agent. The electroplate liquid can be subjected to air agitation and continuous filtration operation and cannot produce a large quantity of bubbles, a plating coat with a bright mirror surface can be obtained, and the current range is wide. The low-bubble weak-acid chloride zinc-nickel alloy electroplate liquid is used for electroplating.
Owner:HARBIN INST OF TECH

P-type disposable programmable device structure

The invention discloses a P-type disposable programmable device structure. An N-type trap is formed on a silicon wafer; a first P-type heavily doped region, a second P-type heavily doped region and a third P-type heavily doped region are sequentially formed on the N-type trap from left to right; gate-oxide is formed on the N-type trap between the first P-type heavily doped region and the second P-type heavily doped region and on the N-type trap between the second P-type heavily doped region and the third P-type heavily doped region; storage tube grid polycrystalline silicon is formed on the gate-oxide between the first P-type heavily doped region and the second P-type heavily doped region; gate tube grid polycrystalline silicon is formed on the gate-oxide between the second P-type heavily doped region and the third P-type heavily doped region; an electricity conductive layer is formed above the storage tube grid polycrystalline silicon; and a dielectric layer is formed between the electricity conductive layer and the storage tube grid polycrystalline silicon. The P-type disposable programmable device structure improves conductive currents of the whole device after programming, and increases current ranges capable of being distinguished before and after the programming.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP

Digital alternating constant-current apparatus

The present invention discloses a digital alternating constant current device, which comprises a thyristor AC voltage-adjusting module, a transformer, a load, a current true effective value detector, an AD converter, a controller and a DA converter. The device is characterized in that the input end of the thyristor AC voltage-adjusting module is connected with an electric network, and the output end is connected with the transformer; the output end of the transformer is connected with the load and the current true effective value sensor; the current true effective value sensor is used for detecting the alternating current signals on the load, and detecting and calculating the true effective value of the actually detected alternating current signals so as to form feedback signals. The device not only improves the accuracy of current control and solves the difficulty of large-current and high-voltage constant current design, but also avoids the problems of insufficient voltage resistance and large heating amount of the high-power tube, and thus greatly reducing the cost of the system.
Owner:FUZHOU UNIV

Bright type cyanide-free zinc plating solution and preparation method thereof

The invention discloses a bright type cyanide-free zinc plating solution and a preparation method thereof. The zinc plating solution consists of the following components: 80-140g / L of sodium hydroxide, 6-12g / L of zinc oxide, 20-40g / L of salt substituted for cyanide,15-20ml / L of a cylinder opening agent, 6-8ml / L of a scattering agent, 2-4ml / L of a brightening agent, and 0.6-0.8 / L of tea saponin. The novel cyanide-free zinc plating solution disclosed by the invention is wide in current range, high in bright dipping speed, delicate in plating crystallization, high in area coverage rate and long valid time for salt mist, and can be used for replacing conventional toxic cyanide zinc plating. The cyanide-free zinc plating solution overcomes the defects that zincate cannot directly electroplate pig iron pieces and cast iron pieces, generates white spots when electroplating high-carbon steel, and is poor in binding force. The cyanide-free zinc plating solution overcomes the defect that when conventional potassium chloride is used for electroplating, long valid time for salt mist cannot be reached.
Owner:HUZHOU FANGMING ENVIRONMENT PROTECTION TECHCO LTD

Double-coil inner and outer ring type induction energy taking system

The invention provides a double-coil inner and outer ring type induction energy taking system, which comprises an energy taking coil, a switch module, an anti-impact module, a rectification filtering module, an overvoltage protection module, a voltage reduction and stabilization module and an energy storage module, and is characterized in that the switch module comprises a first switch, a second switch, a third switch and a current relay; the voltage reduction and stabilization module comprises a front-end DC / DC step-down transformer and a rear-end DC / DC voltage stabilizer, the input ends of the first switch and the second switch are connected with an ultracrystalline magnetic core energy-taking coil and a silicon steel magnetic core energy-taking coil in the energy-taking coil respectively, and the output ends of the first switch and the second switch are connected with the rectification filtering module through the anti-impact module. The output end of the rectification filtering module is connected with an overvoltage protection module for controlling the first switch and the second switch and a front-end DC / DC step-down transformer, and the output end of the front-end DC / DC step-down transformer is connected with a rear-end DC / DC voltage stabilizer through a current relay, an energy storage module and a third switch. The double-coil and inner and outer ring mode is adopted to take energy, the energy taking dead zone is reduced, and the energy taking current range, the energy taking efficiency and the output power are increased.
Owner:CHONGQING UNIV OF TECH

Remote network base station phase determination and phase verification & current and voltage acquisition device and system

The invention discloses a remote network base station phase determination and phase verification & current and voltage acquisition device and in particular, a wireless high-voltage remote phase determination, phase verification, current, voltage, phase, frequency, waveform, power and electric energy testing device. The device comprises a hook type detector; a multi-layer flexible coil is arrangedinside the hook type detector; a voltage acquisition metal sheet is fixed to the inner side of the hook type detector; the multi-layer flexible coil and the voltage acquisition metal sheet are connected into an acquisition main control module; and the acquisition main control module is connected into a GPS module and a GSM module. Since the multi-layer flexible coil is integrated in the hook typedetector, the hook type detector has good linearity and high precision in current, current frequency, phase and waveform acquisition, and the precision of the hook type detector can reach 0.2%; the position error of the collector is almost zero within the range of Phi168mm; a phase A, a phase B, and a phase C can be identified accurately during phase verification; and electric energy and power canbe analyzed, and remote intelligent remote sensing and telemetering can be realized.
Owner:广东鹰测技术有限公司

Novel isolated gate bipolar transistor module distributed with direct coated copper base plates

The invention discloses a novel isolated gate bipolar transistor module distributed with direct bonded copper base plates, comprising a base plate, the direct bonded copper base plates (DBC), an isolated gate bipolar transistor chip, a diode chip and a power terminal, wherein the base plate is combined with the direct bonded copper base plates (DBC) through braze welding; the isolated gate bipolar transistor chip, the diode chip and the direct bonded copper base plates (DBC) are combined through braze welding; the base plate is combined with the direct bonded copper base plates (DBC) through braze welding, the base plate is brazed with two groups of four direct bonded copper base plates (DBC), and each direct bonded copper base plate (DBC) comprises a gate electrode, a collector electrodeand an emitting electrode. The invention has good compatibility, large applied current range and low cost.
Owner:STARPOWER SEMICON

Difference PWM modulator and current-mode DC-DC converter based on the modulator

InactiveCN105450022AGenerating circuit is simpleEasy to design for stabilityDc-dc conversionElectric variable regulationDc dc converterPeak value
The invention discloses a difference PWM modulator and a current-mode DC-DC converter based on the modulator, for solving the problem that a conventional single-end modulator is not suitable for a current-mode DC-DC converter which detects output currents by use of an off-chip resistor. The difference PWM modulator comprises: difference-mode voltages between single-end control voltages and common-mode voltages are amplified through a gain grade A1, difference voltages of feedback currents are amplified through a gain grade A2, after amplification through the gain grade A1 and the gain grade A2, difference signals are input to a comparator for comparison, PWM output is generated, and differences between first feedback voltages CS and second feedback voltages VOUT are the difference voltages of the feedback currents. According to the invention, a detection resistor RS of the current-mode DC-DC converter based on the modulator is arranged in an output path, and peak or valley current-mode PWM is realized by use of the difference voltages on the resistor RS. The difference PWM modulator is suitable for application of a battery charger and the like which need off-chip resistors for detecting output currents.
Owner:SHANGHAI SOVAN ELECTRONICS TECH CO LTD

Experiment equipment for starting and stopping of motor

The invention discloses an experiment equipment for starting and stopping of motor, comprises a processor, a power supply, at least one solid state relay module, a memory module and a display module.The solid state relay module comprises a solid state relay drive interface circuit and a solid state relay, a control end of the solid state relay drive interface circuit is connected to an output port of the processor, the output end of the solid state relay drive interface circuit is connected to the solid state relay, the solid state relay is connected to the start stop control loop of the motor; the data access control port of the memory module is connected to a serial data port of the processor, the memory module is suitable for storing data in powering down; a data input end of the display module is connected to the output port of the processor, the processor is suitable for setting the start time and the stop time of the motor, saving the start time and the stop time in the memory module, and sending to the display module for display; and the motor is started and stopped periodically according to the starting time and the stopping time. The experiment equipment for starting andstopping of motor prolongs the service life of the traditional mechanical time relay, and enhances the electrical isolation.
Owner:重庆欧尼斯特机电有限公司

Cyanide-free alkaline copper plating process capable of recovering waste liquid

The invention discloses a cyanide-free alkaline copper plating process capable of recovering waste liquid. The cyanide-free alkaline copper plating process comprises the steps of preparing a plating agent, adjusting pH value, heating a plating solution and electroplating. The cyanide-free alkaline copper plating process comprises the steps that water with a volume ratio of at least 50% is added into a plating bath, preparing of is the plating agent is carried out according to the raw material composition ratio, the plating agent is added into the plating bath, water is added to dissolve and adjust the pH value of the plating solution, the plating bath is heated, the plating solution is heated, energizing and plating are carried out, and the plating solution is continuously filtered. According to the cyanide-free alkaline copper plating process capable of recovering the waste liquid, through creative improvement of the raw material ratio and the process flow, the copper plating processcan better process materials and has better copper plating effect, and is suitable for any metal substrate such as pure copper, copper alloy, iron, stainless steel, zinc alloy die castings, aluminum and aluminum alloy workpieces. At the same time, the waste liquid produced after copper plating can be collected, more energy conservation and environment prevention are achieved, the copper plating effect is better, the cost required by the copper plating process is effectively reduced, and the cyanide-free alkaline copper plating process is suitable for promotion in the market.
Owner:东莞市永晟环保技术有限公司

Electron beam source and use of same

Provided is an electron beam source (200) for generating an electron beam and comprising a cathode (240), an anode and a grid for regulating an electron beam current. The cathode has a base (242) anda protrusion (244) with sidewalls (247) and a top surface (248). The base surface and the top surface are essentially flat. The base surface and the top surface are arranged at a predetermined distance D from each other. The base is larger than the protrusion. The electron beam source further comprising a control unit adapted for changing an applied voltage to the grid for switching a spot size ofthe electron beam on a target surface between at least a first a first spot size corresponding to emission from the top surface of the cathode only and to a second spot size corresponding to emissionfrom the top surface and the base surface of the cathode.
Owner:阿尔卡姆公司

P-type OTP (one time programmable) device and preparing method therefore

The invention discloses a P-type OTP (one time programmable) device. A channel region of a second PMOS (P-channel metal oxide semiconductor) transistor is provided with one N-type threshold voltage injection region more than a channel region of a first PMOS transistor, and the threshold voltage injection region is used for increasing absolute value of threshold voltage of the second PMOS transistor. The invention also discloses a preparing method for the P-type OTP device. The preparing method comprises the following steps: performing N-type ion implantation on the channel region of the second PMOS transistor by increasing a mask to form the threshold voltage injection region. According to the P-type OTP device and preparing method provided by the invention, threshold voltage of the second PMOS transistor can be increased, programmable performance of the P-type OTP device can be greatly improved, conducted current of the whole device can be improved after programming, distinguishable current range before and after programming can be increased for the device, and area of peripheral circuit for realizing OTP functions can be decreased.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP

Heavy-current sampling resistor

The invention discloses a heavy-current sampling resistor. The adopted technical scheme is as follows: two ends of single or two constantan wires are connected with brass sampling ends; and a data line hole (4mm) and a fixed hole (6mm) are respectively arranged on the two brass sampling ends. The heavy-current sampling resistor is designed for higher current (25A-125A) and is applicable to connection of cable joints and sampling data lines; and the single wire suitable for low current and the two wires suitable for high current are adopted in the middle of the resistor, thus the resistor can adapt to wider current range.
Owner:TIANJIN HONGRUIDE TECH

P-type one time programmable (OTP) device and manufacturing method thereof

The invention discloses a P-type one time programmable (OTP) device. The device is a one time programmable device formed by two P-channel metal oxide semiconductor (PMOS) transistors connected in series, wherein the first PMOS transistor is used as a gate transistor, while the second PMOS transistor is used as a storage unit, and the grid of the second PMOS transistor floats; and the source of the second PMOS transistor comprises a coupling region of the source and the floating gate formed by injection of P-type foreign ions so as to increase the coupling capacitance between the source and the gate of the second PMOS transistor. The invention also discloses a method for manufacturing the P-type OTP device, which is to form a coupling region of the source and the gate by P-type foreign ioninjection in the second PMOS transistor after polycrystalline silicon is etched. In the invention,, the programming performance of the P-type OTP device is ensured to be greatly improved, the conduction current of the whole device can be improved after programming is completed, the differentiable current ranges of the device before and after programming are increased, and the area of a peripheralcircuit for realizing the OTP function can be reduced.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP

System for controlling discharging of super capacitor by relay group

The invention discloses a system for controlling discharging of a super capacitor by a relay group. The system comprises a computer, a control system in communication connection with the computer, a resistance adjusting module connected with the control system electrically, a joint connected with the resistance adjusting module and the control system electrically, a charger connected with the control system electrically, a power storage assembly connected with the charger and the control system electrically, and two shunts connected with the control system and the joint electrically. The system having a simple structure can be used conveniently; the controlled current range is large; the service life is long; long-time measurement is realized; the intelligent degree is high; and the cost is low.
Owner:ETOCSIN

Digital miniature circuit breaker capable of automatically opening and closing

The invention discloses a digital miniature circuit breaker capable of automatically opening and closing. The digital miniature circuit breaker comprises a main loop, a detection unit, a control module, an opening and closing coil control unit, an action unit and an execution mechanism. The action unit comprises an opening and closing coil and a movable iron core, the opening and closing coil is connected with current through an opening and closing coil control unit, and the movable iron core is in transmission connection with the execution mechanism; the detection unit is electrically connected with the control module, the output end of the control module is electrically connected with the opening and closing coil control unit, and the opening and closing coil control unit changes the flow direction of current flowing through the opening and closing coil according to received control signals of the control module and drives the movable iron core to drive the executing mechanism to be opened or closed. According to the miniature circuit breaker, an electric operation module does not need to be introduced, automatic switching-on and switching-off functions can be achieved through a single coil, the miniature circuit breaker has a large current range while product miniaturization is kept, automatic switching-on and switching-off control is achieved for the first time within the width of 18 mm, the full range of 1-128A is supported, remote control can be achieved, and the miniature circuit breaker has great practical value.
Owner:苏州泰立得智能科技有限公司

P-type one-time programmable (OTP) device and manufacturing method thereof

The invention discloses a P-type OTP device. A source of a second P-channel metal oxide semiconductor (PMOS) transistor of the P-type OTP device comprises a first P-type foreign ion implantation region, the first P-type foreign ion implantation region extends from an edge position of a P-type diffusion region of the second PMOS transistor to the bottom of a gate of the second PMOS transistor and forms a first coupling region between the source of the second PMOS transistor and the grid of the second PMOS transistor, the width of the first coupling region is wider than those of second coupling regions formed by all P-type lightly-doped regions and corresponding grids, and the concentration of the first coupling region is greater than those of second coupling regions. The invention also discloses a manufacturing method of the P-type OTP device. By the aid of the P-type OTP device and the manufacturing method, the programming performance of the P-type OTP device can be greatly improved, the breakover current of the whole device after programming is improved, current ranges which can be distinguished before and after programming of the device can be increased, and the area of a peripheral circuit which is used for implementing an OTP function can be reduced.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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