Semiconductor device and manufacturing method thereof

Abstract

The invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a substrate, an insulated embedded layer formed in the substrate, at least one deep trench insulated structure formed on the insulated embedded layer, and a deep trench contact structure which is formed between the deep trench insulated structures electrically connected with the substrate positioned under the insulated embedded layer. The semiconductor device contains an undoped insulated material of polysilicon, and can buffer the stress generated at a jointing interface because the lattice difference degree between an epitaxial layer and a liner layer containing oxide, thereby improving the stability and the effect of elements. The deep trench contact structure can be formed by using a process of a contact plug connector electrically connected with the elements, so the deep trench contact structure and the contact plug connector can be simultaneously formed in the same process without performing extra process steps and achieving the aim of reducing the cost.

Description

technical field [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, in particular to a deep trench contact structure and a deep trench insulating structure and a manufacturing method thereof. Background technique [0002] In today's semiconductor technology, in order to achieve the operation of a single-chip system (single-chip system), the controller, memory, low-voltage operating circuits, and high-voltage operating power components are highly integrated on a single chip, and the research and development types of power components include There are vertical double-diffused metal oxide transistors (VDMOS), insulated gate bipolar transistors (IGBT), and lateral power transistors (LDMOS). The purpose of their research and development is to improve power conversion efficiency and reduce energy loss. Since high-voltage transistor elements and low-voltage CMOS circuit elements need to be provided simultaneously on a single wafer, an ...

AI Technical Summary

Problems solved by technology

[0004] With the continuous improvement of semiconductor manufacturing technology, the size of integrated circuits is getting smaller and smaller, and the circuit is getting denser. At the same time, the working clock (clock) is getting faster and faster. This is called resistance-capacitance delay and resistance-capacitance delay (RC Delay). RC Delay not only hinders the clock growth, but also increases the unnecessary power consumption of the circuit.

These effects have different degrees of influence on the operation of the circuit, and also cause doubts about the stability of the circuit. Especially in the era of high-speed circuit operation, the tolerance of the circuit to these interferences is getting lower and lower, which further deepens the seriousness of this problem.

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