Method for simulating data storage of EEPROM by using built-in FLASH program storing device of single-chip

A technology of data storage and single-chip microcomputer, which is applied in the direction of program control device, program loading/starting, etc., which can solve the problems of inability to asynchronous, incapable of programming, short life, etc., and achieve the effect of reducing circuit cost and saving I/O

Inactive Publication Date: 2010-02-10
HISENSE BEIJING ELECTRIC
View PDF2 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The single-chip microcomputer in the prior art is all one-time programming, which cannot be programmed during the running of the program, and the area that has already been programmed cannot be reprogrammed.
In this case, to save some data after power failure, an external EEPROM is required, and the data is saved to the external EEPROM through the data I/O port. At present, most s

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for simulating data storage of EEPROM by using built-in FLASH program storing device of single-chip

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0011] The invention includes a single-chip microcomputer, EEPROM, input and output ports, power supply, power supply, input and output ports, and EEPROM are connected to the single-chip microcomputer. A power supply failure detection circuit is connected to the single-chip microcomputer. The power supply failure detection circuit detects whether there is a power failure sign. If not, The single-chip microcomputer sets all the input and output ports to normal status; if there is, the single-chip microcomputer sets all the input and output ports to a non-power consumption state, and then checks whether the EEPROM has a memory mark, if not, continue the above steps to cycle; if there is, close the interrupt Program, that is, it is not allowed to interrupt the storage, and then program the built-in FLASH program memory of the microcontroller according to the rules. After the programming is completed, the programming flag is cleared to prevent repeated programming, and the cycle cont...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a method for burning single-chip programs, in particular to a method for performing burning by using a built-in FLASH program memory of a singlechip. The invention provides amethod for simulating EEPROM by using the built-in FLASH program memory of the singlechip, which not only can use the FLASH program memory of the singlechip to perform burning but also causes no influence on the normal working procedure, and comprises the singlechip, the EEPROM, an input/output port and a power supply, wherein the power supply, the input/output port and the EEPROM are connected with the singlechip, and the singlechip is connected with a power supply power failure detection circuit. Because of using the FLASH program memory of the singlechip to perform information storage, themethod for simulating the data storage of the EEPROM by using the built-in FLASH program memory of the singlechip effectively not only reduces the circuit cost, and but also saves the I/O of the singlechip.

Description

technical field [0001] The invention relates to a programming method of a single-chip computer program, in particular to a method for programming using a built-in FLASH program memory of the single-chip computer. Background technique [0002] The single-chip microcomputers in the prior art are all programmed once, and cannot be programmed during the running of the program, and the areas that have been programmed cannot be reprogrammed. In this case, to save some data after power failure, an external EEPROM is required, and the data is saved to the external EEPROM through the data I / O port. At present, most single-chip microcomputers are FLASH program memory, so they can also be saved during operation. FLASH is rewritten, but FLASH programming has low programming times and short life, and the programming time is long and cannot be asynchronous, that is, during the programming process, the normal working program cannot run, and it can only run after the programming is complete...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G06F9/445
Inventor 兰永玉
Owner HISENSE BEIJING ELECTRIC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products