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Heat treatment method of target material

A heat treatment method and technology of a heat treatment device, which are applied in metal material coating process, ion implantation plating, coating, etc., can solve problems such as uneven structure and uneven heating of targets, and achieve uniform structure and meet the requirements of sputtering. Requirements, the effect of uniform heating

Active Publication Date: 2010-02-17
KONFOONG MATERIALS INTERNATIONAL CO LTD
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Problems solved by technology

[0006] The purpose of the present invention is to provide a target heat treatment method to solve the problem of uneven structure of the target due to uneven heating in the heat treatment process in the prior art

Method used

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  • Heat treatment method of target material

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[0048] The following takes 4N5 or 5N titanium target as an example to illustrate the process steps and results of heat treatment in the target heat treatment method of the present invention:

[0049] (1) Provide titanium targets after plastic deformation process. The titanium target material through the plastic deformation process has a structure with a better grain size.

[0050] (2) Submerge the titanium target material into the sand filled in the heat treatment device, so that the periphery of the titanium target material is covered by sand. What described sand adopts is No. 45 silicon carbide (45#SiC).

[0051] (3) Heat the sand and heat-treat the target. Specifically include: the heating temperature is 550° C., and the temperature is kept at this temperature for 5.5 hours.

[0052] Through the above steps, a target that meets the sputtering requirements is finally obtained.

[0053] The target heat treatment method provided by the present invention adopts the sand bat...

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Abstract

The invention provides a heat treatment method of a target material. The method comprises the following steps: providing the target material which is titanium or titanium alloy; and heating sand whichcan cover the target material to carry out heat treatment on the target material. Compared with the prior art, the invention guarantees the target material to be uniformly heated by a sand-bath heating method, thereby realizing the uniformity of the organization structure of the target material and meeting the requirement of sputtering.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a target heat treatment method. Background technique [0002] In the semiconductor industry, the target structure is composed of a target that meets the sputtering performance and a back plate that is combined with the target and has a certain strength. The back plate can play a supporting role when the target structure is assembled to the sputtering base station, and has the effect of conducting heat. At present, for example, metal titanium (Ti) or tantalum (Ta) material can be selected as the target material, and copper or aluminum material with sufficient strength and high thermal and electrical conductivity can be selected as the back plate material. [0003] The production process of metal targets generally includes: smelting, homogenization treatment, plastic deformation processing, heat treatment and other steps. On the basis of strictly controlling the purity o...

Claims

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Application Information

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IPC IPC(8): C22F1/18C21D1/34C23C14/34C23C14/14
Inventor 姚力军潘杰王学泽周友平刘庆
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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