Flat heater and plasma processing equipment

Abstract

The invention discloses a flat heater and plasma processing equipment. In the flat heater, an auxiliary support is arranged between a main support and the edge of a heating plate. The auxiliary support may be column-shaped four-corner support, column-shaped multipoint support, plate-shaped support, taper-shaped support, and pyramid-shaped support. Due to the auxiliary force and the reverse thermal expansion effect of the auxiliary support, the plane deformation of the heating plate is improved, the smoothness is maintained, the heating plate can be better contacted with a process substrate arranged above the heating plate, the heating property and the polar plate grounding property of the heating plate are better ensured, the mechanical structure is stable, and the uniformity of the process parameters is little affected; in addition, by adjusting the length of the auxiliary support, the operations of replacing and maintaining the auxiliary support are effectively saved, and the maintenance cost of main support parts is lowered. The flat heater is mainly applied to plasma enhanced chemical vapor deposition equipment or other plasma processing equipment.

Description

technical field [0001] The invention relates to plasma equipment, in particular to a flat heater and plasma processing equipment. Background technique [0002] PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment is used to achieve thin film deposition on the substrate surface in the plasma processing process of polycrystalline silicon solar cell manufacturing and other semiconductor device manufacturing. Plasma energy increases the activity of reactive particles, and enables the process gas to achieve dissociation, reaction, deposition and other processes at a temperature of 300°C to 500°C. [0003] Such as figure 1 As shown, in the process chamber 5 of PECVD in the prior art, the substrate 6 is placed on the flat heater 7 in the process chamber 5, and the flat heater 7 serves as the lower electrode plate at the same time, and constitutes with the inlet uniform flow plate 8 The upper and lower electrode plates are fed with high-frequency or low-frequency energy, an...

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Problems solved by technology

[0008] like image 3 As shown, at a higher temperature and a larger size, the thermal expansion degree of the upper surface of the heating plate 2 is slightly higher than that of the lower surface, resulting in downward bending in the horizontal and vertical directions along the heating plate 2 plane, and the cumulative Finally, a more obvious downward curling phenomenon is produced on the four corners of the heater, so that the corners of the substrate above it are separated from the heating plate 2, causing its heating performance and plate grounding performance to be affected, thereby affecting temperature uniformity and Uniformity of plasma distribution

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