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High-frequency surface acoustic wave component and substrate thereof

A surface acoustic wave and component technology, applied in electrical components, impedance networks, etc., can solve the problems of material outage, unstable supply, and inability to further reduce manufacturing costs, and achieve the effect of reducing component manufacturing costs and reducing manufacturing costs.

Inactive Publication Date: 2010-03-03
TATUNG UNIVERSITY +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, since various optoelectronic applications, such as light-emitting diodes, also require sapphire substrates as their substrates, sapphire substrates are not only expensive recently, but also their supply is not stable, and there are often incidents of material outages.
Therefore, since the sapphire substrate is used as the substrate, the manufacturing cost of the known high-frequency surface acoustic wave components cannot be further reduced, and there are often situations where the known high-frequency surface acoustic wave components cannot be manufactured due to broken sapphire substrates.

Method used

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  • High-frequency surface acoustic wave component and substrate thereof
  • High-frequency surface acoustic wave component and substrate thereof
  • High-frequency surface acoustic wave component and substrate thereof

Examples

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Embodiment Construction

[0027] see Figure 2A and Figure 2B ,in Figure 2A is a schematic perspective view of a high-frequency surface acoustic wave component according to an embodiment of the present invention, Figure 2B is along Figure 2A The schematic cross-section obtained by the line B-B'. Such as Figure 2A and Figure 2B As shown, the high-frequency surface acoustic wave component 2 of the present invention includes: a substrate 21; a first buffer layer 22 formed on the surface of the substrate 21; a second buffer layer 23 formed on the surface of the first buffer layer 22; a piezoelectric layer 24 formed on the surface of the second buffer layer 23; an input conversion part 25; and an output conversion part 26. Wherein, the input conversion part 25 and the output conversion part 26 are arranged on the surface of the piezoelectric layer 24 in pairs, and the input conversion part 25 and the output conversion part 26 are all interdigitated electrodes, and they form a set of "interdigita...

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Abstract

The invention relates to a high-frequency surface acoustic wave component and a substrate thereof, in particular to a high-frequency surface acoustic wave component without using an expensive sapphiresubstrate as a substrate of the component and the substrate thereof. The high-frequency surface acoustic wave component comprises a substrate, a first buffering layer formed on the surface of the substrate, a second buffering layer formed on the surface of the first buffering layer, a piezoelectric layer formed on the surface of the second buffering layer, an input conversion part and an output conversion part, wherein the input conversion part and the output conversion part are arranged on the surface of the piezoelectric layer or below the piezoelectric layer in pairs; the substrate is a silicon substrate; the first buffering layer is silicon oxide of which the thickness is between 0.05 and 0.2 mum; the second buffering layer is aluminum oxide of which the thickness is between 0.5 and 20 mum; and the piezoelectric layer is a piezoelectric film made of zinc oxide, aluminium nitride, lithium niobate or lithium tantalite materials.

Description

technical field [0001] The invention relates to a high-frequency surface acoustic wave component and its substrate, in particular to a high-frequency surface acoustic wave component that does not need an expensive sapphire substrate as its substrate and a high-frequency surface acoustic wave component that can replace the sapphire substrate substrate. Background technique [0002] see Figure 1A and Figure 1B ,in Figure 1A is a three-dimensional schematic diagram of a known high-frequency surface acoustic wave component, Figure 1B is along Figure 1A A schematic cross-sectional view obtained by line A-A'. Such as Figure 1A and Figure 1B As shown, the known high-frequency surface acoustic wave component 1 includes: a substrate 11 ; a piezoelectric layer 12 formed on the surface of the substrate 11 ; an input conversion part 13 ; and an output conversion part 14 . Wherein, the input conversion part 13 and the output conversion part 14 are arranged on the surface of th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/02
Inventor 施文钦王惠民
Owner TATUNG UNIVERSITY