One-time programmable memory based on variable-resistance memory and preparation method thereof

A technology of resistive variable memory and memory, which is applied in the direction of read-only memory, static memory, information storage, etc., and can solve the problems that the one-time programming memory cannot adopt the cross-array structure and the area of ​​the storage unit is large, so as to achieve the suppression of read crosstalk and high storage capacity. Density, cost reduction effect

Inactive Publication Date: 2010-03-10
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF0 Cites 20 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention aims at the disadvantages that the existing MOS transistor structure one-time programming memory has relatively large storage unit area, and the one-time programming memory based on the MOS transistor structure cannot adopt the cross array structure, and provides a resistive variable memory-based one-time programming memory and its preparation method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • One-time programmable memory based on variable-resistance memory and preparation method thereof
  • One-time programmable memory based on variable-resistance memory and preparation method thereof
  • One-time programmable memory based on variable-resistance memory and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] The principles and features of the present invention will be described below with reference to the accompanying drawings. The examples cited are only used to explain the present invention, and are not used to limit the scope of the present invention.

[0033] figure 2 It is a schematic diagram of the structure of the one-time programming memory based on the resistive random access memory of the present invention, image 3 It is an equivalent circuit diagram of the one-time programming memory based on the resistive random access memory of the present invention. Such as figure 2 and image 3 As shown, the one-time programming memory includes a resistive random access memory 20 with bipolar switching characteristics and a diode 10 with rectification characteristics. The resistive random access memory 20 with bipolar switching characteristics and the diode 10 with rectification characteristics are connected in series. The resistive random access memory 20 with bipolar switch...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a one-time programmable memory based on a variable-resistance memory and a preparation method thereof, belonging to the technical field of microelectronic manufacture and thememory. The one-time programmable memory comprises the variable-resistance memory with the characteristic of bipolar conversion and a diode with the rectification characteristic which are connected inseries. The one-time programmable memory based on the variable-resistance memory adopts the diode with the rectification characteristic as a gating unit, adopts the variable-resistance memory with the characteristic of bipolar conversion as a memory unit, connects the diode and the variable-resistance memory in series, not only has simple structure, easy integration, high density and low cost, but also has rectification function when in low impedance state, can restrict read crosstalk in a crossed array structure, avoid misreading, can adopt integration of the crossed array structure and canrealize higher memory density.

Description

Technical field [0001] The invention relates to a memory and a preparation method thereof, in particular to a one-time programming memory based on a resistive random access memory and a preparation method thereof, and belongs to the technical field of microelectronic manufacturing and memory. Background technique [0002] Current microelectronic products are mainly divided into two categories: one is logic devices, and the other is storage devices. At present, memory is used in almost all electronic products, and memory plays a very important role in the field of microelectronics. Memory can generally be divided into volatile memory and non-volatile memory. Volatile memory means that the information in the memory must be retained when power is applied, and the information stored when the power is not turned on will be lost; the main feature of non-volatile memory is that it can be stored for a long time without power on Information. Non-volatile memory not only has the charact...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G11C17/06H01L27/24H01L21/82
Inventor 刘明左青云龙世兵
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap