Method for preparing reflection reduction film with surface embedded type porous silicon structure of silicon base solar battery

A technology of solar cells and anti-reflection coatings, applied in chemical instruments and methods, circuits, electrical components, etc., can solve problems such as lack of crystal orientation

Inactive Publication Date: 2010-03-17
SHANGHAI UNIV
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Problems solved by technology

However, the preparation of surface-embedded porous...

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  • Method for preparing reflection reduction film with surface embedded type porous silicon structure of silicon base solar battery
  • Method for preparing reflection reduction film with surface embedded type porous silicon structure of silicon base solar battery

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Embodiment

[0023] The process and steps of this embodiment are as follows

[0024] For the device used in this embodiment, refer to the figure 1 . figure 1 It is a schematic diagram of the device for preparing antireflection film or low reflectivity film by electrochemical corrosion method. The device is a commonly used laboratory device.

[0025] (1) Select solar cell silicon substrate material, which is Czochralski monocrystalline silicon, P type, crystal orientation , thickness is 220 μm, unpolished; first place the silicon wafer as the solar cell silicon substrate material on Preliminary corrosion is carried out in the sodium hydroxide magnetic solution, to remove the mechanical damage layer on the surface of the silicon wafer; the preparation of the lye is that the volume ratio of sodium hydroxide and water is 1:5; the temperature of the lye is 80 ° C; The silicon wafer is placed in the alkali solution and corroded for 1 minute under the action of ultrasonic waves;

[0026] (2...

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Abstract

The invention relates to a method for preparing a reflection reduction film with a surface embedded type porous silicon structure of a silicon base solar battery, which belongs to the technical fieldof electrochemical corrosion. The method is characterized in that a metal aluminum film anode electrode is prepared at the back face of a silicon wafer by a traditional silk screen printing method firstly, and Al and silicon have favorable ohmic contact; in addition, a platinum wafer or a platinum wire is used as a cathode electrode; afterwards, the front face of the silicon wafer is put into corrosive liquid with HF:H2O of 1:10 (volume ratio) and soaked for 1 minute; the temperature of the corrosive liquid is 26 DEG C; then, the front face of the silicon wafer is put into a container under anultrasonic condition of the ultrasonic frequency of 40-60Hz, and electrochemical corrosion processing is carried out in mixed liquid with HF:H2O:C2H5OH of 2:1:1 (volume ratio) of electrolyte; the temperature of the electrolyte is 40 DEG C; the surface density of electrolytic corrosion current is 5-10mA/cm<2>; the electrolytic corrosion time is 40-60s; and finally, the reflection reduction layer film with the surface embedded type porous silicon structure is formed at the front face of the silicon wafer, and the reflectivity of the reflection reduction layer film is 1.42% averagely.

Description

technical field [0001] The invention relates to a method for preparing an anti-reflection film with a porous silicon structure embedded on the surface of a silicon-based solar cell, belonging to the technical field of electrochemical corrosion. Background technique [0002] At present, for monocrystalline silicon solar cells, TiO is often used in industry 2 , MgF 2 , ZnS and Si 3 N 4 Anti-reflection coatings such as anti-reflective coatings have high production costs and complicated processes. How to cheaply and reliably prepare anti-reflective coatings for silicon-based solar cells is one of the key technologies for the continuous improvement of photoelectric conversion efficiency and large-scale industrialization of solar cells. Micron-scale porous silicon has the following advantages as an embedded anti-reflection layer for solar cells: [0003] (1) The surface-embedded porous silicon has a high suede texture density, random orientation, and good uniformity. It can b...

Claims

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Application Information

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IPC IPC(8): H01L31/18C25F3/12C30B33/10
CPCY02P70/50
Inventor 马忠权张楠生
Owner SHANGHAI UNIV
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