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Semiconductor luminous device and packaging structure thereof

A light-emitting device and semiconductor technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as difficult heat dissipation and reduced wavelength conversion efficiency

Active Publication Date: 2012-12-12
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is no specific direction in which the light is emitted. If the wavelength conversion material does not completely cover the possible light emission of the LED core, part of the light fails to pass through the wavelength conversion material, such as side-ray light, which will lead to a decrease in the wavelength conversion efficiency of light. reduce
On the other hand, if the wavelength conversion material completely covers the bare LED core, although the efficiency of wavelength conversion can be improved, it is easy to cause problems such as difficult heat dissipation

Method used

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  • Semiconductor luminous device and packaging structure thereof
  • Semiconductor luminous device and packaging structure thereof
  • Semiconductor luminous device and packaging structure thereof

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Embodiment Construction

[0036] Figure 5 It is a cross-sectional view of a semiconductor light emitting device structure 100, and its fabrication procedure is as follows: Figure 1 to Figure 5 shown. figure 1 A light emitting diode is shown as an example, which includes a growth substrate 21 whose material can be gallium arsenide, silicon, silicon carbide, sapphire, indium phosphide, gallium phosphide, aluminum nitride or gallium nitride. Next, an epitaxial structure 22 is formed on the growth substrate 21 . The epitaxial structure 22 is formed by an epitaxial process, such as metal organic vapor deposition epitaxy (MOCVD), liquid phase epitaxy (LPE) or molecular beam epitaxy (MBE). The epitaxial structure 22 includes at least a first electrical type semiconductor layer 23, such as an n-type aluminum gallium indium phosphide (Al x Ga 1-x ) y In 1-y P layer or an n-type aluminum gallium indium nitride (Al x Ga 1-x ) y In 1-y N layer; an active layer 24, such as aluminum gallium indium phosp...

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Abstract

The invention discloses a semiconductor luminous device and a packaging structure thereof. The semiconductor luminous device is provided with a semiconductor luminous element, a transparent adhesive and a wavelength conversion structure. Primary colored light emitted by the semiconductor luminous element is excited into color changing light of which the wavelength is different from that of the primary colored light through the wavelength conversion structure.

Description

technical field [0001] The invention relates to a semiconductor light-emitting device and its packaging structure, in particular to a semiconductor light-emitting device with a wavelength conversion structure and a transparent adhesive material and its packaging structure. Background technique [0002] A light-emitting diode (Light-emitting Diode; LED) is a semiconductor solid-state device, including at least one p-n junction (p-n junction), and the p-n junction is formed between p-type and n-type semiconductor layers. When a certain degree of bias is applied to the p-n junction, holes in the p-type semiconductor layer and electrons in the n-type semiconductor layer will combine to release light. The region where the light is generated is generally called an active region. [0003] The main features of LEDs are small size, high luminous efficiency, long life, fast response, high reliability and good chromaticity, and have been widely used in electrical appliances, automobil...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
CPCH01L33/50H01L33/54H01L33/60
Inventor 许嘉良
Owner EPISTAR CORP