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Method for production of purified silicon

A manufacturing method and silicon region technology, applied to chemical instruments and methods, self-solidification methods, silicon compounds, etc., can solve problems such as unfavorable production speed and reduced solidification speed

Inactive Publication Date: 2010-03-31
SUMITOMO CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In this directional solidification method, since the larger the temperature gradient (T) or the slower the solidification rate (R), the more aluminum is segregated on the high temperature side (22), so more refining with a good maximum aluminum concentration can be obtained. Silicon (1), but setting a large temperature gradient (T) requires large-scale equipment, which reduces the solidification rate (R), which is disadvantageous in terms of production speed

Method used

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  • Method for production of purified silicon

Examples

Experimental program
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Effect test

Embodiment 1-1

[0095] Make the aluminum concentration (C 2 ) is 1000ppm, the target maximum aluminum concentration (C 10max ) is 4.0ppm, and the target value of the yield [target yield] (Y 0 ) is 0.18, and the calculation satisfies formula (1) [K 1 ~K 9 The values ​​are respectively and K 1 ’~K 9 ’ same value] standard temperature gradient (T 0 ) and standard solidification rate (R 0 ), the standard temperature gradient (T 0 ) is 0.9℃ / mm, the standard solidification rate (R 0 ) is 0.4 mm / min.

[0096] use figure 1 In the device shown, the aluminum concentration (C 2 ) 1000ppm raw material silicon melt (2), make it solidify with solidification rate (R) 0.4mm / min, obtain figure 2 The silicon direction solidification is shown (4).

[0097] Such as figure 2 As shown, the solidification rate (f) of the cooling process is cut off at the part where the obtained silicon direction solidification (4) is 0.18, and the region (45) on the high temperature side (22) of the temperature gradi...

Embodiment 1-2 and Embodiment 2～ experiment example 7

[0099] In addition to making the aluminum concentration (C 2 ), the target maximum aluminum concentration (C 10max ), target yield (Y 0 ) as shown in table 4, respectively, with the same operation as in Example 1 to obtain the standard temperature gradient (T 0 ) and standard solidification rate (R 0 ), which becomes the same as the obtained standard temperature gradient (T 0 ) the same temperature gradient (T), and the obtained standard solidification rate (R 0 ) the same solidification rate (R), in addition to the same operation as in Example 1, obtain the silicon direction solidification (4), and obtain the solidification rate (f) in the cooling process to be the same as the target solidification rate (Y 0 ) The obtained refined silicon (1) is truncated at a portion having the same value. The maximum aluminum concentration (C 1max ) as shown in Table 4.

[0100] Table 4

[0101]

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Abstract

A standard temperature gradient (T0) and a standard solidification rate (R0) which meet the formula (1) are determined in advance based on C10max and Y0. k = ¢K1Ln(R0)+K2!¢K3exp¢K4R0(K5C2+K6)!!¢K7T0+K8!-K9 (1) wherein k represents a coefficient selected from a range from 0.9 time to 1.1 times an aluminum effective distribution coefficient (k') so measured as to meet the formula (2): C10max = k'C2(1-Y0)k'-1 (2) wherein k' represents analuminum effective distribution coefficient; C2 represents the concentration of aluminum in a silicon molten solution raw material.

Description

technical field [0001] The present invention relates to a method for producing purified silicon, and more specifically relates to a method for producing purified silicon by the so-called directional solidification method in which a raw material silicon melt containing aluminum is cooled and solidified in a mold in which the temperature gradient is set to be unidirectional. . Background technique [0002] As a method for producing refined silicon (1) by removing aluminum from the aluminum-containing raw material silicon melt (2), known figure 1 Shown is a so-called directional solidification method in which the raw material silicon melt (2) is cooled and solidified in a state where the temperature gradient (T) is unidirectional in the mold (3). According to this method, since the raw material silicon melt (2) solidifies while segregating aluminum from the low-temperature side (21) to the high-temperature side (22) of the temperature gradient (T), and becomes a silicon-direct...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/037
CPCC30B11/00C30B29/06C01B33/037C30B28/06
Inventor 惠智裕田渕宏
Owner SUMITOMO CHEM CO LTD