Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of ultrahigh recovery stress Ti-Ni-Cu shape memory alloy thin film

A ti-ni-cu and memory alloy technology, which is applied in the field of preparation of ultra-high recovery stress Ti-Ni-Cu shape memory alloy thin films, can solve the problems such as the inability to meet the ultra-high unit volume output power of micro-drive components, and meet the Effects of small size, reduced phase transition temperature hysteresis, and ultra-high recovery stress

Inactive Publication Date: 2011-07-27
HARBIN INST OF TECH
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention solves the problem that the existing Ti-Ni-Cu shape memory alloy film cannot satisfy the ultra-high output work per unit volume of the micro-drive element; and provides an ultra-high recovery stress Ti-Ni-Cu shape memory alloy for the micro-drive element Film Preparation Method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of ultrahigh recovery stress Ti-Ni-Cu shape memory alloy thin film
  • Preparation method of ultrahigh recovery stress Ti-Ni-Cu shape memory alloy thin film
  • Preparation method of ultrahigh recovery stress Ti-Ni-Cu shape memory alloy thin film

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0011] Embodiment 1: The ultra-high recovery stress Ti-Ni-Cu shape memory alloy thin film of this embodiment is composed of 50.5%-66.6% Ti, 15%-40% Cu and the balance Ni.

[0012] The Ti-Ni-Cu shape memory alloy thin film of the present invention reduces the phase transition temperature hysteresis, the grain size is 50-500nm, the thickness is 3-101μm, has ultra-high recovery stress (higher than 1GPa) and fast response speed The advantages of the micro-drive element can meet the requirements of small size and ultra-high driving force.

specific Embodiment approach 2

[0013] Specific embodiment two: the preparation method of Ti-Ni-Cu shape memory alloy thin film in this embodiment is characterized in that the preparation method of Ti-Ni-Cu shape memory alloy thin film is carried out according to the following steps: with glass as substrate , put the glass into the vacuum chamber of the magnetron sputtering apparatus after cleaning, and evacuate until the vacuum degree in the vacuum chamber is 3×10 -5 Pa; then argon gas is introduced to make the partial pressure of argon gas reach 0.01-0.3Pa, nickel, titanium and copper are used as cathodes to deposit by magnetron co-sputtering method for 1-3h, and during the deposition process, the sputtering of target cathode nickel The power is 150-300W, the sputtering power of target cathode titanium is 1000W, the sputtering power of target cathode copper is 20-50W, and the substrate temperature is 200℃; ~700℃, vacuum degree is 2.7×10 -5 Vacuum heat treatment is carried out under Pa condition for 1min t...

specific Embodiment approach 3

[0023] Embodiment 3: This embodiment differs from Embodiment 2 in that: the magnetron sputtering apparatus is an ultra-high vacuum multi-target magnetron sputtering apparatus. Other steps and parameters are the same as in the second embodiment.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
thicknessaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention relates to an ultrahigh recovery stress Ti-Ni-Cu shape memory alloy thin film for micro-drive elements and a preparation method thereof, belonging to the field of shape memory alloy thin films. The invention solves the problem that the traditional Ti-Ni-Cu shape memory alloy thin film cannot satisfy the ultrahigh unit volume output work of a micro-driving element. Ti-Ni-Cu shape memory alloy thin film contains Ti, Cu and Ni. The method comprises the following steps: cleaning and vacuuming glass, introducing argon, precipitating by taking Ni, Ti and Cu as negative electrodes and adopting a magnetron co-sputtering method, carrying out thermal treatment in vacuum and cooling along with a furnace to obtain the Ti-Ni-Cu shape memory alloy thin film. The crystal granule of the alloy thin film prepared by the method has the size of 50-500 nm and the thickness of 3-10 micrometers, and the Ti-Ni-Cu shape memory alloy thin film has the advantages of ultra recovery stress (higher than 1GPa) and rapid response speed and can satisfy the requirements of small size and ultrahigh driving force of the micro-drive elements.

Description

technical field [0001] The invention belongs to the field of shape-memory alloy thin films; in particular, it relates to a preparation method of ultra-high recovery stress Ti-Ni-Cu shape-memory alloy thin films. The Ti-Ni-Cu shape memory alloy thin film prepared by the method of the invention has ultra-high recovery stress and fast response speed. Background technique [0002] Ti-Ni-Cu shape memory alloy thin film is considered to be a promising micro-actuator material with large stress, strain and high unit power density in the field of micromechanics. [0003] The Ti-Ni-Cu alloy film can achieve a small phase transition temperature lag (minimum only 4 degrees) by controlling the composition, which greatly improves the response speed of the film, and its output stress is large, showing a good application prospect. However, when the Cu content exceeds 10 at.% (atomic percent), it becomes very difficult to prepare Ti-Ni-Cu alloy thin films by the ordinary strip-spinning meth...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C22C14/00C23C14/35C23C14/14
Inventor 孟祥龙傅宇东蔡伟
Owner HARBIN INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com