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White light luminous diode and iodide garnet phosphor powder thereof

A phosphor and garnet technology, applied in the electronic field, can solve problems such as the decrease of phosphor luminous brightness and the complex process of phosphor

Inactive Publication Date: 2010-05-26
罗维鸿
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Such as how to replace Tb, Gd, Sm, La, Sr, Ba, Ca, Mg, B, Si, Ge, F and N, second, while all enter Y 3 Al 5 o 12 : The unreasonable elements of the Ce component will lead to a decrease in the luminance of the phosphor
Third, the method of gel (sol) technology must be used for the acquisition of micro-particle phosphors, and the process of preparing phosphors is very complicated

Method used

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  • White light luminous diode and iodide garnet phosphor powder thereof
  • White light luminous diode and iodide garnet phosphor powder thereof
  • White light luminous diode and iodide garnet phosphor powder thereof

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Embodiment Construction

[0030] First of all, the object of the present invention is to eliminate the disadvantages of the above phosphor and the white light emitting diode using the phosphor. In order to achieve this goal, the rare earth iodide garnet fluorescent powder of the present invention is based on a rare earth oxide element with a garnet structure, and is characterized in that: adding and introducing iodide ion I -1 Si +4 , the electrons in the anion lattice compensate each other, forming the following stoichiometric formula: (∑Ln) 3 Al 2 (Al 1-x Si x o 4-x I x ) 3 , where ΣLn=Y and / or Gd and / or Tb and / or Lu and / or La and / or Ce and / or Pr; the phosphor radiation can produce long-wavelength shift under the excitation of an InGaN semiconductor heterojunction.

[0031] Wherein, the stoichiometric index is 0.0001

[0032] Wherein, the long-wave shift is Δ≥25 nm.

[0033] Among them, the composition of rare earth element ions in the anion lattice is as follows: 0.5≤Y / ∑Ln≤0.95; 0.0...

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Abstract

The invention relates to a white light luminous diode and iodide garnet phosphor powder thereof, wherein the iodide garnet phosphor powder takes a rare earth oxide element of a garnet framework as a matrix. The iodide garnet phosphor powder is characterized in that iodide ions I-1 and silicon ions Si+4 are added and introduced to the phosphor powder material, and electrons are compensated mutually in anion crystal lattices, thereby forming the following chemometry formula: (SigmaLn)3Al2[Al1-xSixO4-xIx)]3, wherein SigmaLn is equal to Y and / or Gd and / or Tb and / or Lu and / or La and / or Ce and / or Pr; the radiation wave of the phosphor powder can generate long wave displacement under the excitation of an InGaN semiconductor heterojunction. In addition, the invention also discloses a method for preparing the iodide garnet phosphor powder.

Description

technical field [0001] The present invention relates to the field of electronic technology, in particular to an iodide garnet phosphor related to the lighting technology known as "Solid state lighting" in a broad sense and an iodide garnet phosphor using the iodide garnet phosphor. White Light Emitting Diodes. Background technique [0002] Semiconductor light-emitting diodes have developed rapidly in the past 50 years. Engineers have developed GaAs-GaP-based materials, mainly for infrared light and red light, adding phosphors called anti-Stokes, absorbing infrared radiation, and re-exciting Visible light is emitted (please refer to S.Berg A.DinB light emitting diode (LED) "Mir" Moskow P625.1992), but such light-emitting diodes have very low efficiency (for 2θ=30° angle, no more than I=0.1cd). The scope of application of this technology is very narrow. [0003] Japanese researcher S.Nakanura (please refer to S.Nakamura's Blue laser, BerligSpringer, 1997) took the lead in ma...

Claims

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Application Information

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IPC IPC(8): C09K11/86H01L33/00
CPCY02B20/181Y02B20/00
Inventor 索辛纳姆罗维鸿蔡绮睿
Owner 罗维鸿
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