Lateral diffused metal oxide semiconductor transistor structure capable of avoiding double-hump effect
An oxide semiconductor and transistor technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of transistor leakage, low turn-on voltage, low turn-on voltage, etc., and achieve the effect of constant threshold voltage Vt and uniform thickness
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[0021] In order to better understand the technical content of the present invention, specific embodiments are given and described below in conjunction with the accompanying drawings.
[0022] Figure 4 is a schematic top view of the LDNMOS structure disclosed in the present invention; Figure 5 for Figure 4 The cross-sectional schematic diagram of the LDNMOS structure along the x direction; Image 6 for Figure 4 A schematic cross-sectional view of the LDNMOS structure along the y-direction.
[0023] Please also refer to Figures 4 to 6 , In this embodiment, the LDNMOS structure includes a base layer B, an oxide layer GOX, and a polysilicon layer P sequentially from bottom to top.
[0024] In this embodiment, the base layer B is an N well, and the polysilicon layer P formed thereon serves as the gate G of the LDNMOS. There are correspondingly arranged N-type drift regions N-d on both sides of the oxide layer GOX in the base layer B as the source S and the drain D of the...
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