Lithography layout and method for measuring lithography deformation thereof
Patent Information
- Authority / Receiving Office
- CN ยท China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANGHAI HUAHONG GRACE SEMICON MFG CORP
- Publication Date
- 2011-06-22
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
technical field
[0001] The invention relates to a manufacturing device of a semiconductor integrated circuit, in particular to a photolithographic layout, and also relates to a method for measuring photolithographic deformation by using the photolithographic layout. Background technique
[0002] In the current manufacturing process of integrated semiconductors, during the first-layer photolithography process, the rotation mark is used to monitor the quality of the first photolithography, and the deformation of the first photolithography is judged according to the rotation mark.
[0003] In a common photolithography layout, two scribe lines (ScribeLine) are arranged around the exposure unit (shot) 1 , one is a linear scribe line 3 and the other is a C-shaped scribe line 2 . The two cutting lines form a ring. Wherein the two ends of the C-shaped cutting line are respectively provided with rotation marks X and Y. The rotation marks X and the rotation marks Y are linearly arra...