Lithography layout and method for measuring lithography deformation thereof

A layout and photolithography technology, applied in the field of semiconductor integrated circuit manufacturing equipment, can solve the problems of easy misjudgment, large dicing line layout area, and loss of function of rotation marks, and achieve the effect of improving deformation accuracy

Active Publication Date: 2011-06-22
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] This kind of lithography layout, when monitoring the quality of the first lithography, can only use the method of visual inspection, the measurement accuracy is relatively poor, and it is prone to misjudgment
And the area occupied by the cutting line is also relatively large
[0005] In addition, in the production process of semiconductor integrated circuits, a windmill-shaped scribe line (Scribe Line) is used. In this windmill-shaped scribe line, the linearly arranged rotating marks lose their function and cannot be photolithographically Deformation measurement

Method used

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  • Lithography layout and method for measuring lithography deformation thereof
  • Lithography layout and method for measuring lithography deformation thereof
  • Lithography layout and method for measuring lithography deformation thereof

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Embodiment Construction

[0024] Such as image 3 As shown, the lithography layout of the present invention includes an exposure unit (shot) 1, and four scribe lines (Scribe Line) 4 around the exposure unit 1 are arranged in a windmill shape, that is, the four scribe lines 4 are respectively arranged on the four sides of the exposure unit 1 Above, each cutting line 4 starts from the vertex of the exposure unit 1 and ends at the midpoint of the side, and is arranged in sequence. The width of each cutting line 4 is in the range of 100 microns to 20 microns, which is half of the width of the cutting lines in the prior art.

[0025] The end of the cutting line 4 , that is, the cutting line 4 is overlaid with a rotation mark A or B at the midpoint of each side of the exposure unit 1 , and the rotation marks A and B are used as overlay marks. The rotation marks A, B are respectively aligned with the center 10 of the exposure unit (shot) 1 .

[0026] Such as Figure 6 As shown, the rotation mark A is a squ...

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Abstract

The invention discloses a lithography layout, comprising an exposure unit, wherein four edges of the exposure unit are provided with a cutting street respectively; each cutting street is arranged in windmill shape; and the tail end of each cutting street is provided with a rotation mark which is aligned to the center of the exposure unit. The four rotation marks can be divided to two types, one is frame shape, and the other is rectangular shape. Two different rotation marks are arranged at the tail ends of the cutting streets, and can be measured through a machine aligning precision measurement in the current technical process without adding new machines. The lithography layout determines the deformation condition of first lithography through measuring two rotating marks so as to improve the deformation precision of the first lithography. The length and width of the cutting street are only half of the length and width of the cutting street in the prior art, so that the proportion of the dimension of the cutting street on a silicon wafer can be greatly shortened. The invention also discloses a method for measuring lithography deformation by adopting the lithography layout.

Description

technical field [0001] The invention relates to a manufacturing device of a semiconductor integrated circuit, in particular to a photolithographic layout, and also relates to a method for measuring photolithographic deformation by using the photolithographic layout. Background technique [0002] In the current manufacturing process of integrated semiconductors, during the first-layer photolithography process, the rotation mark is used to monitor the quality of the first photolithography, and the deformation of the first photolithography is judged according to the rotation mark. [0003] In a common photolithography layout, two scribe lines (ScribeLine) are arranged around the exposure unit (shot) 1 , one is a linear scribe line 3 and the other is a C-shaped scribe line 2 . The two cutting lines form a ring. Wherein the two ends of the C-shaped cutting line are respectively provided with rotation marks X and Y. The rotation marks X and the rotation marks Y are linearly arra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G03F9/00H01L21/027G03F1/44
Inventor 陈福成阚欢吴鹏
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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