Novel reduced-vacuum implantation dose compensation method for ion implantation apparatus

An ion implanter and compensation method technology, applied to discharge tubes, electrical components, circuits, etc., can solve the problems of poor vacuum, inaccurate implant dose measurement, and inaccurate ion implant dose.

Inactive Publication Date: 2010-06-30
BEIJING ZHONGKEXIN ELECTRONICS EQUIP
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Problems solved by technology

[0004] The present invention aims at the inaccurate measurement of the implantation dose caused by the vacuum reduction of the ion implanter, and proposes a ...

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  • Novel reduced-vacuum implantation dose compensation method for ion implantation apparatus
  • Novel reduced-vacuum implantation dose compensation method for ion implantation apparatus

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Embodiment Construction

[0017] The present invention will be further introduced below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

[0018] refer to figure 1 , The flow of the new compensation method for ion implanter vacuum reduction implantation dose metering includes four steps 1, 2, 3, and 4.

[0019] First, step 1 is carried out, using a residual gas analyzer to analyze the residual gas in the ion implanter to obtain the type of residual gas remaining in the ion implanter, and these residual gases are different from those injected during the previous ion implantation process gas, such as nitrogen, carbon dioxide, oxygen, nitrogen, water vapor or hydrogen, etc. And measure the partial pressure value of the above residual gas in the ion implanter.

[0020] Then, carry out step 2, the constant K of each residual gas (such as the constant K1 of the first residual gas, the constant KZ of the second residual gas and the con...

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Abstract

The invention discloses an ion implantation dose accurate control method for ion implantation apparatus. The novel reduced-vacuum implantation dose compensation method for the ion implantation apparatus comprises the following four steps: (1) analyzing residual gases in the ion implantation apparatus by using a residual gas analyzer to obtain the kinds of the residual gases in the ion implantation apparatus, and measuring the partial pressure value of the residual gases in the ion implantation apparatus; (2) finding out the constant K of each residual gas according to the analyzed kinds of the residual gases, wherein the constant K stands for the capacity of the residual gas to carry out the charge exchange reaction with a ion beam; (3) measuring the current value Ic of the ion beam under the condition of reduced vacuum; (4) and according to the current value Ic of the ion beam, the coefficients K1, K2 and K3, and the following formula, calculating to obtain the actual implantation dose of the ion beam, Is:Is=Ic*e(K1P1+K2P2+K3P3). Thus, the theoretical implantation dose compensation method can avoid the problem of adding vacuum pumps to the implantation apparatus in order to increase the vacuum pumping speed as well as the related problems, thereby reducing the cost of the ion implantation apparatus; and meanwhile, the method can be flexibly applied according to actual conditions.

Description

technical field [0001] The invention relates to a method for precisely controlling the dose of ion implantation, in particular to an ion implanter used in the ion implantation process of semiconductor manufacturing, and belongs to the field of semiconductor device manufacturing. Background technique [0002] Ion implanter is one of the most critical doping equipment in the manufacture of semiconductor devices. With the reduction of device size and the improvement of integration, the impurity concentration of ion implantation must be precisely controlled. Among them, the vacuum degree in the ion implanter is one of the factors that affect the accuracy of the ion implantation dose; in general, the vacuum degree in the ion implanter will become worse with the increase of the use time of the machine: on the one hand, with photolithography The glue wafer will release a lot of gas when it is injected. On the other hand, after a long time of production, the adsorption capacity of ...

Claims

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Application Information

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IPC IPC(8): H01J37/317H01J37/244
Inventor 戴习毛郭健辉金则军
Owner BEIJING ZHONGKEXIN ELECTRONICS EQUIP
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