Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Novel reduced-vacuum implantation dose compensation method for ion implantation apparatus

An ion implanter and compensation method technology, applied to discharge tubes, electrical components, circuits, etc., can solve the problems of poor vacuum, inaccurate implant dose measurement, and inaccurate ion implant dose.

Inactive Publication Date: 2010-06-30
BEIJING ZHONGKEXIN ELECTRONICS EQUIP
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention aims at the inaccurate measurement of the implantation dose caused by the vacuum reduction of the ion implanter, and proposes a new method for compensating the ion implantation dose to solve the problem of inaccurate ion implantation dose caused by the poor vacuum degree of the ion implanter

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Novel reduced-vacuum implantation dose compensation method for ion implantation apparatus
  • Novel reduced-vacuum implantation dose compensation method for ion implantation apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] The present invention will be further introduced below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

[0018] refer to figure 1 , The flow of the new compensation method for ion implanter vacuum reduction implantation dose metering includes four steps 1, 2, 3, and 4.

[0019] First, step 1 is carried out, using a residual gas analyzer to analyze the residual gas in the ion implanter to obtain the type of residual gas remaining in the ion implanter, and these residual gases are different from those injected during the previous ion implantation process gas, such as nitrogen, carbon dioxide, oxygen, nitrogen, water vapor or hydrogen, etc. And measure the partial pressure value of the above residual gas in the ion implanter.

[0020] Then, carry out step 2, the constant K of each residual gas (such as the constant K1 of the first residual gas, the constant KZ of the second residual gas and the con...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an ion implantation dose accurate control method for ion implantation apparatus. The novel reduced-vacuum implantation dose compensation method for the ion implantation apparatus comprises the following four steps: (1) analyzing residual gases in the ion implantation apparatus by using a residual gas analyzer to obtain the kinds of the residual gases in the ion implantation apparatus, and measuring the partial pressure value of the residual gases in the ion implantation apparatus; (2) finding out the constant K of each residual gas according to the analyzed kinds of the residual gases, wherein the constant K stands for the capacity of the residual gas to carry out the charge exchange reaction with a ion beam; (3) measuring the current value Ic of the ion beam under the condition of reduced vacuum; (4) and according to the current value Ic of the ion beam, the coefficients K1, K2 and K3, and the following formula, calculating to obtain the actual implantation dose of the ion beam, Is:Is=Ic*e(K1P1+K2P2+K3P3). Thus, the theoretical implantation dose compensation method can avoid the problem of adding vacuum pumps to the implantation apparatus in order to increase the vacuum pumping speed as well as the related problems, thereby reducing the cost of the ion implantation apparatus; and meanwhile, the method can be flexibly applied according to actual conditions.

Description

technical field [0001] The invention relates to a method for precisely controlling the dose of ion implantation, in particular to an ion implanter used in the ion implantation process of semiconductor manufacturing, and belongs to the field of semiconductor device manufacturing. Background technique [0002] Ion implanter is one of the most critical doping equipment in the manufacture of semiconductor devices. With the reduction of device size and the improvement of integration, the impurity concentration of ion implantation must be precisely controlled. Among them, the vacuum degree in the ion implanter is one of the factors that affect the accuracy of the ion implantation dose; in general, the vacuum degree in the ion implanter will become worse with the increase of the use time of the machine: on the one hand, with photolithography The glue wafer will release a lot of gas when it is injected. On the other hand, after a long time of production, the adsorption capacity of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01J37/317H01J37/244
Inventor 戴习毛郭健辉金则军
Owner BEIJING ZHONGKEXIN ELECTRONICS EQUIP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com