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Phase change memory device and manufacturing method thereof

A storage device and manufacturing method technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems that the write current and reset current cannot be further reduced, and the structure of unfavorable phase change memory cells can be scaled down.

Active Publication Date: 2012-02-15
POWERCHIP SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the diameter D of the heater electrode 16 0 It is still limited by the ability of the current photolithography process, which makes its shrinkage degree limited, so it is impossible to further reduce the operating current such as write current and reset current, which will not be conducive to the miniaturization of its phase change memory cell structure.

Method used

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  • Phase change memory device and manufacturing method thereof
  • Phase change memory device and manufacturing method thereof
  • Phase change memory device and manufacturing method thereof

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Embodiment Construction

[0054] The manufacture of the phase change memory device of the present invention will cooperate with Figure 2 to Figure 14 The schematic situation is described in detail as follows.

[0055] Please refer to Figure 2-7 , shows the cross-sectional situation in different process steps in the method for manufacturing the phase change memory device according to the embodiment of the present invention. In this embodiment, only part of the fabrication of the storage unit in the phase-change memory device is shown, and the phase-change memory device may include the fabrication of more than one storage unit, instead of using Figure 2-7 The invention is limited to the manufacturing situation shown.

[0056] Please refer to figure 2 First, a semiconductor substrate is provided, such as a silicon substrate, on which a semiconductor device covered by a dielectric layer and / or other conductive interconnect structures can be arranged, and the semiconductor device arranged on it is, f...

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Abstract

A phase-change storage device and a manufacturing method thereof. A phase-change memory device, comprising: a substrate, on which a first dielectric layer is arranged; a first electrode, arranged in the first dielectric layer; a second dielectric layer, located on the first dielectric layer; a heating electrode , disposed in the second dielectric layer; a phase change material layer located on the second dielectric layer; and a second electrode located on the phase change material layer, wherein the heating electrode has a contact with the first electrode A first portion and a second portion contacting the phase change material layer, the second portion includes metal silicide and the first portion does not include metal silicide.

Description

technical field [0001] The present invention relates to a memory device, in particular to a phase-change memory device and a manufacturing method thereof. Background technique [0002] Phase-change memory has the characteristics of non-volatility, high read signal, high density, high erase and write times, and low operating voltage / current, and it is a non-volatile memory with great potential. In order to increase the storage density, reducing the programming current, especially the reset current is an important technical indicator. [0003] The phase change material used in the phase change memory can present at least two solid states, including crystalline state and amorphous state. Generally, the change of temperature is used to switch between the two states, because the disordered atomic arrangement of the amorphous state has relatively High resistance, so the crystalline state and the amorphous state of the phase change material can be easily distinguished by simple el...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00H01L27/24
Inventor 李乾铭黄明政庄仁吉林家佑王敏智
Owner POWERCHIP SEMICON MFG CORP