Method for manufacturing organic electroluminescence device

Abstract

Provided is a method for manufacturing an organic EL device, by which a damage applied to an inorganic EL element is suppressed at the time of forming a film including an inorganic material layer for sealing the organic EL element. An organic EL element (20) is constituted by sandwiching an organic EL layer (22) including a light emitting layer between a pair of electrodes of which at last one electrode is transparent or translucent. A sealing layer (30) includes at least one inorganic material film brought into contact with the organic EL element (20) and seals the organic EL element (20). At the time of forming the organic EL element and the sealing layer on a substrate (10), a first sealing film (31) brought into contact with the organic EL element (20) in the sealing layer (30) is formed by a facing target sputtering method, and other inorganic films in the sealing layer (30) are formed by film forming methods other than the facing target sputtering method.

Description

technical field [0001] The invention relates to a manufacturing method of an organic electroluminescent device. Hereinafter, electroluminescence (Electro Luminescence) may be abbreviated as EL in some cases. Background technique [0002] The organic EL element has a structure in which an organic EL layer including a light emitting layer made of an organic light emitting material is sandwiched between a pair of electrodes at least one of which is transparent or translucent. When a voltage is applied between a pair of electrodes of an organic EL element having such a structure, electrons are injected from the cathode into the light-emitting layer, and holes (holes) are injected into the light-emitting layer from the anode, and the electrons and holes are formed in the light-emitting layer. recombine in. Next, the light-emitting material in the light-emitting layer is excited by the energy generated at this time, so that the light-emitting layer emits light. In this specific...

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Problems solved by technology

As described above, the magnetron sputtering method can form an inorganic passivation film at a high film-forming rate, but there is a problem that the light-emitting layer in the organic EL element will be affected by the influence of plasma or the like during film formation. damage

In addition, the current CVD method such as plasma CVD method or thermal CVD method for forming an inorganic passivation film can also form an inorganic passivation film at a high film formation rate, but there is still the following problem. , the light-emitting layer in the organic EL element will be damaged by heat and plasma

As a result, the conventional method of forming an inorganic passivation film has the problem of deteriorating the light-emitting characteristics of the light-emitting layer.

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