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Reducing power consumption during read operations in non-volatile storage

A non-volatile storage, non-volatile technology, applied in the field of non-volatile memory

Inactive Publication Date: 2013-01-30
SANDISK TECH LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, one problem with memory devices is that whenever there may be a need to reduce power consumption, for example to reduce battery consumption and heat generation in portable electronic devices using non-volatile memory

Method used

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  • Reducing power consumption during read operations in non-volatile storage
  • Reducing power consumption during read operations in non-volatile storage
  • Reducing power consumption during read operations in non-volatile storage

Examples

Experimental program
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Embodiment Construction

[0036] The present invention provides a method of reducing power consumption during a read operation in a non-volatile memory.

[0037] One example of a memory system suitable for implementing the invention uses a NAND flash memory structure that includes multiple transistors arranged in series between two select gates. Transistors and select gates connected in series are called NAND strings. figure 1 is a top view showing one NAND string. figure 2 is its equivalent circuit. figure 1 and 2The NAND string shown includes four transistors, 100 , 102 , 104 and 106 connected in series and sandwiched between a first select gate 120 and a second select gate 122 . Select gate 120 gates the connection of the NAND string to bit line 126 . Select gate 122 gates the connection of the NAND string to source line 128 . Select gate 120 is controlled by applying an appropriate voltage to control gate 120CG. Select gate 122 is controlled by applying an appropriate voltage to control gate...

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PUM

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Abstract

Power consumption in a non-volatile storage device is reduced by providing reduced read pass voltages on unselected word lines during a read operation. A programming status of one or more unselected word lines which are after a selected word line on which storage elements are being read is checked to determine whether the unselected word lines contain programmed storage elements. When an unprogrammed word line is identified, reduced read pass voltages are provided on that word line and other word lines which are after that word line in a programming order. The programming status can be determined by a flag stored in the word line, for instance, or by reading the word line at the lowest read state. The unselected word lines which are checked can be predetermined in a set of word lines, or determined adaptively based on a position of the selected word line.

Description

technical field [0001] The present invention relates to non-volatile memory. Background technique [0002] Semiconductor memory has become increasingly popular for use in various electronic devices. For example, non-volatile semiconductor memory is used in cellular telephones, digital cameras, personal digital assistants, mobile computing devices, non-mobile computing devices, and other devices. Electrically Erasable Programmable Read Only Memory (EEPROM) and flash memory are among the most popular non-volatile semiconductor memories. In contrast to traditional, all-featured EEPROMs, with flash memory, which is also a type of EEPROM, the contents of the entire memory array, or a portion of the memory, can be erased in one step. [0003] Both traditional EEPROM and flash memory use a floating gate located over and insulated from a channel region in a semiconductor substrate. The floating gate is located between the source and drain regions. The control gate is overlying a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/56G11C16/04G11C16/26
CPCG11C11/5628G11C16/26G11C2211/5634G11C11/5642G11C2211/565G11C16/3418G11C16/0483G11C2211/5648G11C16/3459G11C2211/5621G11C16/34G11C16/08
Inventor 迪帕克·C·塞卡尼马·莫克莱西霍克·C·索
Owner SANDISK TECH LLC