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Cleaning method of semiconductor board

A semiconductor and cleaning technology, used in cleaning methods and utensils, semiconductor/solid-state device manufacturing, chemical instruments and methods, etc., can solve problems such as reduced production yield, inability to effectively clean reactive gases, etc., to improve productivity and yield Effect

Active Publication Date: 2010-07-21
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current cleaning process of the reaction chamber uses a special cleaning injection pipe to feed the cleaning gas, which cannot effectively clean the inner wall of the reaction gas injection pipe (as shown in the attached picture), resulting in a decrease in production yield

Method used

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  • Cleaning method of semiconductor board
  • Cleaning method of semiconductor board
  • Cleaning method of semiconductor board

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] figure 1 It is a schematic diagram of a semiconductor machine according to an embodiment of the present invention. In this embodiment, the semiconductor tool 10 includes a reaction chamber 20 , a short reaction gas injection pipe 30 and a long reaction gas injection pipe 40 . The reaction chamber 20 is, for example, a reaction chamber for high-density plasma chemical vapor deposition (HDPCVD), which includes a dome 22 and an inner wall 24 . The short reaction gas injection pipe 30 and the long reaction gas injection pipe 40 are disposed around the central axis of the reaction chamber 20 for delivering the reaction gas and the cleaning gas into the reaction chamber 20 . The short reaction gas injection pipes 30 and the long reaction gas injection pipes 40 are, for example, arranged in a staggered manner, and the inclination angles of the short reaction gas injection pipes 30 and the long reaction gas injection pipes 40 (that is, angles with the vertical) may be differen...

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Abstract

The invention discloses a cleaning method of a semiconductor board, comprising the following steps of: firstly, carrying out a first cleaning step on a reaction chamber, i.e. introducing cleaning gas into the reaction chamber through a short reaction gas injection pipe so as to generate a plasma of the cleaning gas in the reaction chamber; secondly, cleaning a long reaction gas injection pipe, i.e. introducing the cleaning gas into the reaction chamber through the long reaction gas injection pipe; and finally carrying out a second cleaning step on the reaction chamber, i.e. introducing the plasma of the cleaning gas into the reaction chamber through the short reaction gas injection pipe. The cleaning method of the semiconductor board can effectively clean the inside of the reaction chamber and the inner walls of the reaction gas injection pipes, thus the invention can prevent deposits on the inside of the reaction chamber and the inner walls of the reaction gas injection pipes from falling on a chip so as to substantially improve the productivity and the yield of the chip.

Description

technical field [0001] The invention relates to a semiconductor technology, and in particular to a method for cleaning a semiconductor machine. Background technique [0002] In the semiconductor process, no matter the deposition process or the etching process is performed on the chip, the reaction gas used will also be deposited on the inner surface of the reaction chamber of the semiconductor tool, forming a source of particles in the reaction chamber. These particles may fall on the chips that are processed subsequently, causing the chip to be reimbursed and greatly reducing the yield of the chip. Therefore, after a certain number of chips are processed by the semiconductor equipment, the reaction chamber must be cleaned to remove deposits attached to the surface of the reaction chamber. [0003] Generally speaking, nitrogen trifluoride (NF 3 ) is a clean gas (clean gas) to clean the reaction chamber. Specifically, nitrogen trifluoride is passed into the reaction chambe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00C23C16/44B08B7/00
Inventor 李宗达唐瑞麟罗志添钟国保
Owner UNITED MICROELECTRONICS CORP