Nonvolatile storage apparatus and method for writing data into nonvolatile storage apparatus

一种非易失性存储、存储单元阵列的技术，应用在信息存储、静态存储器、数字存储器信息等方向，能够解决缩短器件使用寿命、动作可靠性不易充分等问题

Inactive Publication Date: 2010-08-11
PANASONIC SEMICON SOLUTIONS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] In the above-mentioned conventional configuration, when it is attempted to actually construct a memory cell array, there are problems in that the reliability of operation is not sufficient, and in addition, the service life of the device is likely to be shortened.

Method used

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  • Nonvolatile storage apparatus and method for writing data into nonvolatile storage apparatus
  • Nonvolatile storage apparatus and method for writing data into nonvolatile storage apparatus
  • Nonvolatile storage apparatus and method for writing data into nonvolatile storage apparatus

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no. 1 approach

[0222] [constitute]

[0223] Figure 5 It is a block diagram showing an example of the nonvolatile memory device according to the first embodiment of the present invention. Below, refer to Figure 5 The nonvolatile memory device 300 of this embodiment will be described. In addition, regarding the relationship with the first composition ( figure 1 ) between common constituent elements and with the second constituent ( Figure 5 ) between common components, with the same symbol and name, and omit description.

[0224] As shown in the figure, the nonvolatile memory device 300 includes as main components: a memory cell array 70, a row decoder 66, a word line driver 68 (second selection circuit), a multiplexer circuit 75 (first selection circuit) ), a series resistance switching circuit 310, a parallel resistance switching circuit 30, a write pulse drive circuit 50, a read comparison determination circuit 72, a switch controller 74, a control device 80 and a communication bus...

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Abstract

A nonvolatile storage apparatus (300) having a memory cell array that comprises a plurality of resistance-changeable elements each of which transitions from one of a plurality of resistance states to another in response to an electric pulse of the same polarity. A series-resistor setting unit (310) is disposed between a memory cell array (70) and an electric pulse applying device (50). The series-resistor setting unit is controlled, thereby varying, with time, the resistance value of a series current path within a predetermined range at least either when a selected resistance-changeable element is caused to change from a low resistance state to a high resistance state or when the selected resistance-changeable element is caused to change from the high resistance state to the low resistance state.

Description

technical field [0001] The present invention relates to a nonvolatile storage device and a data writing method for writing data into the nonvolatile storage device. More specifically, it relates to a nonvolatile memory device for writing data into a variable resistance element using a difference in voltage level of electric pulses of the same polarity, and a data writing method for writing data into the nonvolatile memory device. Background technique [0002] Nonvolatile memory devices are widely installed in portable devices such as mobile phones and digital cameras, and their applications are gradually and rapidly expanding. In recent years, opportunities for processing audio data and image data have increased, and a nonvolatile memory device that has a larger capacity and operates at a higher speed than conventional ones has been strongly desired. In addition, in the field of nonvolatile memory devices for portable devices, the demand for low power consumption is also in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C13/00
CPCG11C2013/0078G11C13/0069G11C13/0038G11C2213/79G11C2213/15G11C13/00
Inventor 加藤佳一岛川一彦
Owner PANASONIC SEMICON SOLUTIONS CO LTD
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