Method for manufacturing black silicon material by scanning and irradiation of light source of broad-pulse laser

Abstract

The invention discloses a method for manufacturing a black silicon material by scanning and irradiation of a light source of a broad-pulse laser, comprising the following steps of: 1, putting silicon slices into a sulfur-series matter environment; and 2, scanning and irradiating the surfaces of the silicon slices by using lasers focused through a lens to form the black silicon material with silicon micro tapers, silicon micro particles and silicon micro holes. By using the method, the used laser pulse width is in a nanosecond or microsecond or millisecond mode, even a continuous direct-current mode, and the wavelength is 1064 nm. The black silicon micro-structure material with silicon micro tapers, silicon micro particles and silicon micro holes, which has strong absorb function for a whole solar spectrum, can be manufactured by using the light source of the broad-pulse laser to scan the silicon slices in the sulfur-series matter environment.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic materials, in particular to a method for producing black silicon material by scanning and irradiating a wide pulse laser light source. Background technique [0002] In recent years, material surface processing technology based on high-intensity laser scanning irradiation has received extensive attention. Researchers at Harvard University in the United States scanned the silicon surface with a high-intensity femtosecond laser light source, and obtained a new material with a fine-sized pyramid-conical microstructure, the so-called black silicon material. [0003] The light absorption efficiency of black silicon material is significantly improved (MRS Belletin, 31 (2006) 594). Especially when silicon wafers are exposed to chalcogenide gases such as SF 6 , H 2 Under S and other environments, the black silicon material obtained after laser light source scanning has an absorption...

AI Technical Summary

Problems solved by technology

[0005] At present, in the black silicon material production technology that has been disclosed, the laser light source used is a narrow pulse femtosecond laser light source with a wavelength of ≤800nm. The wavelength of the light source is much smaller than the band gap wavelength of the silicon material, so that the effect of light on silicon within a few micrometers of silicon surface thickness

[0006] In addition, the high-power narrow-pulse femtosecond laser source used has a complex structure and high price, which is not conducive to the industrial production of black silicon materials

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