Silicon controlled rectifier electrostatic discharge protection circuit structure triggered by grid controlled diode

Abstract

The invention relates to a silicon controlled rectifier (SCR) electrostatic discharge (ESD) protection circuit structure triggered by a grid controlled diode, belonging to the technical field of electronics. Through integrating the grid controlled diode with low breakdown voltage, the trigger voltage of a conventional SCR ESD protection circuit structure is converted to the breakdown voltage of a grid controlled N+ / P well (or N well / P+) node from the breakdown voltage of a P well / N well node, thereby reducing the trigger voltage of the SCR ESD and finally well protecting a circuit in a chip. Moreover, through changing the grid controlled bias voltage of the grid controlled diode, the trigger voltage of the SCR ESD protection circuit structure can be controlled; and through simply adjusting the dimension parameters of a device, the controllable maintaining voltage of the device can be obtained. The structure is suitable for technologies such as CMOS, BiMOS, BCD, SOI and the like, can be connected between an integrated circuit and a power supply and is used as the ESD protection of a power clamp, and can also be connected between the input port and the output port of the integrated circuit and the power supply (ground) and is used as the ESD protection of the input port and the output port.

Description

Technical field [0001] The present invention belongs to the field of electronic technology, and relates to a protection circuit used for electrostatic discharge (ESD) in an integrated circuit, and more particularly to a silicon controlled rectifier (Semiconductor Controlled Rectifier, SCR) electrostatic discharge circuit structure. Background technique [0002] Electrostatic discharge is a common phenomenon in the manufacturing, production, assembly, testing, storage, and handling of semiconductor devices or circuits. The excess charge it brings will pass through the IC of the integrated circuit in a very short time. The / O pin passes into the integrated circuit and destroys the internal circuit of the integrated circuit. To solve this problem, manufacturers usually install a protection circuit between the internal circuit and the I / O pins. The protection circuit must be activated before the pulse current of electrostatic discharge reaches the internal circuit to quickly eliminat...

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Problems solved by technology

for figure 1 For the SCR structure shown, to increase its sustain voltage, it is necessary to increase the P well package cathode N + or N well package anode P + The distance, and the increase of these two size parameters will often bring higher device trigger voltage, which is not conducive to the device protection of the internal circuit

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