Power MOS (Metal Oxide Semiconductor) device with groove and manufacturing method thereof
A technology of MOS devices and trenches, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as sudden collapse, reduce aspect ratio, expand process window, and increase trench side wall area Effect
Active Publication Date: 2012-01-11
WUXI NCE POWER
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Problems solved by technology
Because for the closed-ring pressure-dividing groove structure, because the groove length is on the order of millimeters, the photoresist layer between the adjacent protective ring grooves after the groove photolithography is exposed and developed and the subsequent etching The hard mask layer that needs to be preserved after etching has the risk of sudden collapse (fall) during wafer transfer or cleaning
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[0028] The present invention will be further described below in conjunction with specific drawings and embodiments.
[0029] Such as Figure 2 to Figure 10 As shown: taking an N-type MOS device as an example, the present invention includes a cell area A, a gate electrode lead terminal area B, a voltage division protection area C, a cut-off protection area D, an N+ substrate 1, an N-type epitaxial layer 2, and a cell Trench 3, insulating oxide layer 4, conductive polysilicon 5, P well layer 6, N+ injection layer 7, first dielectric layer 8, second dielectric layer 9, first ohmic contact hole 10, source metal 11, second metal layer 12 , voltage dividing trench 13 , stop trench 14 , second ohmic contact hole 15 , third ohmic contact hole 16 , gate metal 17 and third metal 18 .
[0030] Such as figure 2 Shown is a top view of the MOS device of the present invention. Such as figure 2 As shown: the central area of the semiconductor substrate is provided with a cell area A, a...
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The invention relates to a power MOS device with a groove and a manufacturing method thereof. A potential dividing protection zone comprises a plurality of potential dividing protection units which are mutually independent, use a groove structure and are separated by using second conduction type layers, and therefore, the problems of invalidation of a whole potential dividing ring and weak capability of resisting process defects caused by partial defects of an enclosed annular structure; and simultaneously, a length-width ratio of an annular enclosed potential dividing groove is also relatively decreased, a process window in a processing procedure is expanded, and the processing is convenient. The second conduction type layer between adjacent potential dividing protection units is connected with the second conduction type layer in a cell zone through a source-electrode metal to form zero potential. When the MOS device is reversely biased, the potential dividing zone consisting of the potential dividing protection units can enclose electric potential lines emitted by the cell zone, the surface area for absorbing the electric potential lines in the potential dividing protection zoneis increased by the potential dividing protection unit, the area of the side wall of the groove of the potential dividing protection units for sharing the electric potential lines of the cell zone isincreased, and the electric potential lines emitted from the cell zone can be borne uniformly in a multi-azimuth and equipotential manner.
Description
technical field [0001] The invention relates to a power MOS device and a manufacturing method thereof, in particular to a trench power MOS device and a manufacturing method thereof. Background technique [0002] Improving device performance and reducing manufacturing costs are the two main driving forces for the continuous development of power MOS devices. The development of these two aspects mainly depends on the level of process processing and device design. As an important part of power MOS devices, the design of the terminal protection structure not only directly affects the performance of the device, but also plays an important role in the number of photolithography plates used in the manufacturing process and the final manufacturing cost. [0003] In the prior art, the Chinese patent "A Deep Trench High-Power MOS Device and Its Manufacturing Method" with the publication number ZL200710302461.4 discloses a device structure with four photolithographic plates (the top vie...
Claims
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IPC IPC(8): H01L29/78H01L29/06H01L21/336
Inventor 朱袁正冷德武叶鹏丁磊
Owner WUXI NCE POWER