Radio-frequency power amplifier circuit
A technology for amplifier circuits and radio frequency power, applied in power amplifiers, high-frequency amplifiers, etc., can solve the problems of reducing power gain, circuit oscillation, power amplifier circuit instability, etc., to improve stability, prevent heat loss, and reduce costs Effect
Inactive Publication Date: 2010-09-29
RDA TECH
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Problems solved by technology
Since the ballast resistance is too large, the power gain will be reduced, and reducing the ballast resistance value cannot provide enough voltage drop between the DC bias voltage DCIN and the transistor base B to meet the thermal balance, and the power amplifier circuit of this structure is working When there is a risk of instability, there will be a phenomenon of circuit oscillation
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[0013] The invention discloses a radio frequency power amplifier circuit, such as figure 2 As shown, the input radio frequency signal is connected to multiple sets of triode circuits, and the multiple sets of triode circuits are connected in parallel. In each set of triode circuits, the signal reaches the base of a triode through a DC blocking capacitor and a radio frequency resistor connected in series. , the DC power supply terminal is respectively connected to the middle of the DC blocking capacitor and the radio frequency resistor in each group of triode circuits through a DC resistor, the emitters of the triodes in each group of triode circuits are grounded, and the collectors are connected to the output terminal of the radio frequency signal.
[0014] Such as figure 2 As shown, this embodiment includes RF input port RFIN, RF output port RFOUT, DC bias input port DCIN, transistors Tr201~Tr20n, DC resistors Ra201~Ra20n, RF resistors Rb201~Rb20n, DC blocking capacitors C2...
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The invention discloses a radio-frequency power amplifier circuit. In the invention, an inputted radio-frequency signal is connected to multi-groups of triode circuits which are connected in parallel; in each group of the triode circuits, the signal sequentially passes through a blocking capacitor and a radio-frequency resistance to reach the base electrode of a triode; a DC power end is respectively connected to the middle of the blocking capacitor and the radio-frequency resistance in each group of the triode circuits through a DC resistance; and an emitting electrode of the triode in each group of the triode circuits is grounded, and a collector electrode is connected with an output end of the radio-frequency signal. In the invention, heat loss is stopped through the DC resistance with a large resistance, the stability of the power amplifier circuit is improved by the radio-frequency resistance with a small resistance, the area of a chip is reduced by a simplified structure and the product cost is lowered.
Description
technical field [0001] The invention relates to an amplifier circuit, especially a radio frequency power amplifier circuit. Background technique [0002] In RF power amplifier integrated circuits, due to the high power density and high breakdown voltage characteristics of HBT (Heterojunction Bipolar Transistor), it can provide higher efficiency than other semiconductor devices. In the design of high-power RF power amplifiers, the power is evenly distributed by using multiple transistors to form a parallel structure to prevent excessive heat from degrading the performance and stability of the device. [0003] In an ideal RF circuit operation, the current will be equally divided among multiple HBT transistors, so the problem of local overheating will not occur. However, there will be some slight asymmetry between the transistors of the actual HBT device. In the actual operation of the radio frequency circuit, the operating temperature of a certain transistor may be higher tha...
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IPC IPC(8): H03F3/189H03F3/20
Inventor 陈俊
Owner RDA TECH