Rectifier for use at high temperature

Abstract

The invention discloses a rectifier for use at a high temperature. The rectifier comprises a conductive type semiconductor substrate, a conductive type epitaxial layer, a plurality of conductive type doped regions, an edge conductive type doped region which surrounds the plurality of conductive type doped regions, at least one outer conductive type doped region which surrounds the edge conductive type doped region, a first metal layer which covers the plurality of conductive type doped regions entirely and at least contacts a part of the edge conductive type doped region, and a second metal layer which is an outer conductive type doped region of the edge conductive type doped region and is formed at the back of the conductive type semiconductor substrate. The rectifier has the characteristics of a low forward voltage and a low reverse leakage current, so that the rectifier is suitable to be used in an operating environment at the high temperature; and in addition, in order to improve the impact resistance property of an element, a structure which can reduce electric field accumulation is arranged on the periphery of the rectifier, so that the damage situation of the element is greatly improved.

Description

technical field [0001] The invention relates to a rectifier used under high temperature conditions, in particular to a rectifier with good impact resistance. Background technique [0002] With the continuous improvement of semiconductor technology capabilities, many power components are widely used in the form of diodes. For example, PN junction diodes (PN junctions) are often used in alternator systems as rectifier diodes. The advantage of the PN junction diode is that the reverse leakage current is low; but its main disadvantage is that the forward bias (forward voltage; VF) is high. Under normal operating conditions, the forward bias voltage is about 1V, so the PN junction diode More energy waste is generated in the application. [0003] In addition, Schottky diodes can be regarded as another choice of diode components; the advantage of Schottky diodes is that their forward bias voltage is much smaller than that of PN junction diodes; however, Schottky diodes will genera...

AI Technical Summary

Problems solved by technology

The advantage of the PN junction diode is that the reverse leakage current is low; but its main disadvantage is that the forward bias (forward voltage; VF) is high. Under normal operating conditions, the forward bias voltage is about 1V, so the PN junction diode Generate more energy waste in application

[0003] In addition, Schottky diodes can be regarded as another choice of diode components; the advantage of Schottky diodes is that their forward bias voltage is much smaller than that of PN junction diodes; however, Schottky diodes will generate Considerable leakage current, therefore, the high reverse leakage of Schottky diodes is a great disadvantage when operating in high temperature environment

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