Buffer layer structure of gallium nitride diode device
A buffer layer and diode technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problem of high defect density of aluminum nitride or gallium nitride buffer layers, and achieve the effect of improving the high defect density and improving the quality.
Inactive Publication Date: 2010-10-13
宁波璨圆光电有限公司
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[0005] The technical problem to be solved by the present invention is to provide a buffer layer structure of a gallium nitride diode device, which can effectively improve the problem of excessively high defect density of the aluminum nitride or gallium nitride buffer layer in the known practice, and improve the quality of the diode device, Lifetime and electrostatic voltage withstand
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[0024] figure 1 It is a schematic top view after growing the first buffer layer according to the present invention. like figure 1 As shown, the buffer layer structure proposed by the present invention is to use silicon nitride Si x N y (x, y≥0) grow the first buffer layer at low temperature. In this first buffer layer, Si x N y It is to form a shield including multiple randomly distributed clusters. Then grow aluminum indium gallium nitride Al on this first buffer layer at low temperature w In z Ga 1-w-z A second buffer layer of N (0≤w, zx N y The growth starts on the shielded uncovered substrate and overflows to the shield of the first buffer layer.
[0025] figure 2 is a schematic structural diagram of a gallium nitride diode device according to the first embodiment of the present invention. The structure of the known GaN diode device is as figure 2 As shown, the substrate 10 is generally made of C-Plane, R-Plane or A-Plane alumina single crystal (Sapphire) or...
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The invention discloses a buffer layer structure of a gallium nitride diode device, which is formed through the following steps of: growing a first buffer layer at low temperature by utilizing silicon nitride SixNy (x, y>=0), forming a plurality of randomly distributed and clustered shields by the SixNy in the first buffer layer, then growing a second buffer layer of aluminum / indium / gallium nitride AlwInzGa1-w-zN (0<=w, z<1, and w+z<=1) at the low temperature on the first buffer layer, wherein the second buffer layer does not directly grow on the first buffer layer, but begins to grow from a baseplate unsheltered by the SixNy shields of the first buffer layer in an epitaxial lateral overgrowth (ELOG) mode, and then overflowing to cross onto the shields of the first buffer layer. The buffer layer structure of the gallium nitride diode device can effectively improve the problem of overhigh defect density of the aluminum nitride or gallium nitride buffer layer of a publically-known making method.
Description
technical field [0001] The invention relates to a gallium nitride diode device, in particular to a buffer layer structure in the gallium nitride diode device. Background technique [0002] Gallium nitride (GaN) diode devices, such as gallium nitride light-emitting diodes that can emit blue or violet light or gallium nitride photodiodes that can detect ultraviolet light (Photo Diode), etc., due to their wide energy gap characteristics, are the most recent The focus of research and development in academia and industry. [0003] The known structure of these gallium nitride diode devices is to first grow a buffer layer of aluminum nitride (AlN) or gallium nitride on a substrate at a low temperature (200° C. to 900° C.), and then grow the diode at a high temperature on this buffer layer. Other GaN epitaxial structures for devices. The reason behind this process is that the difference in lattice constant between the substrate and other GaN epitaxial structures of the diode devic...
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IPC IPC(8): H01L33/00
Inventor 武良文简奉任
Owner 宁波璨圆光电有限公司