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Manufacture method of sinking channel type PNPN field effect transistor

A technology of field effect transistors and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as high production costs and complicated process, and achieve low production costs, simple process, and high efficiency Effect

Inactive Publication Date: 2012-07-04
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0019] As mentioned above, in the traditional manufacturing process of the recessed channel type PNPN field effect transistor, the drain region is first formed by the ion implantation process, and then the recessed channel region is formed by etching, and then passed through the non-drain region side of the recessed channel region. The source region and the depletion region are formed by two epitaxial processes or two ion implantation processes, the process is complicated and the production cost is high

Method used

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  • Manufacture method of sinking channel type PNPN field effect transistor
  • Manufacture method of sinking channel type PNPN field effect transistor
  • Manufacture method of sinking channel type PNPN field effect transistor

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Embodiment Construction

[0042] An exemplary embodiment of the present invention will be described in detail below with reference to the accompanying drawings. In the drawings, the thicknesses of layers and regions are exaggerated for convenience of illustration, and the shown sizes do not represent actual sizes. Although these figures do not completely reflect the actual size of the device, they still fully reflect the mutual positions between the regions and the constituent structures, especially the upper-lower and adjacent relationships between the constituent structures.

[0043] The referenced figures are schematic illustrations of idealized embodiments of the invention, and the illustrated embodiments of the invention should not be construed as limited to the particular shapes of regions illustrated in the figures but are to include resulting shapes, such as manufacturing-induced deviations. For example, the curves obtained by etching are usually curved or rounded, but in the embodiment of the ...

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Abstract

The invention discloses a manufacture method of a sinking channel type PNPN field effect transistor. A sinking channel structure ensures that the transistor increases the drive current while reducing the leakage current, i.e. improves the performance of a chip while reducing the power consumption of the chip. By adopting the manufacture method of the sinking channel type PNPN field effect transistor, the process is simple, the efficiency is high, and the production cost is lowered.

Description

technical field [0001] The invention belongs to the technical field of manufacturing semiconductor devices, in particular to a method for manufacturing a PNPN field effect transistor, in particular to a method for manufacturing a recessed channel type PNPN field effect transistor. Background technique [0002] With the continuous development of microelectronic integrated circuit technology, the size of metal-oxide-silicon field effect transistors (MOSFETs) is getting smaller and smaller, and the density of transistors on a unit array is also getting higher and higher. Today's integrated circuit device technology node is already below 45 nanometers, and the leakage current between the source and drain of MOSFETs increases rapidly as the channel length shrinks. Especially when the channel length drops below 30 nanometers, it is necessary to use new devices to obtain a smaller leakage current, thereby reducing chip power consumption. Gate-controlled PNPN field-effect transisto...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L21/265H01L21/22
Inventor 臧松干王鹏飞张卫
Owner FUDAN UNIV