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Bevel plasma treatment to enhance wet edge clean

A plasmonic, edge-based technology applied in the field of material devices

Active Publication Date: 2012-03-07
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, removing the unwanted copper plating on the beveled edge is more challenging

Method used

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  • Bevel plasma treatment to enhance wet edge clean
  • Bevel plasma treatment to enhance wet edge clean
  • Bevel plasma treatment to enhance wet edge clean

Examples

Experimental program
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Effect test

Embodiment Construction

[0022] Exemplary embodiments provide some improved mechanisms for removing unwanted deposits on the bevel edge of a wafer to improve process yield. It will be apparent to one skilled in the art that the present invention may be practiced without some or all of the specific details set forth herein.

[0023] Figure 1A Shown is a cross-sectional view of a copper-clad substrate 105 having a substrate body 100 with a front side 110, a back side 120 and a very edge 130 between the front side and the back side, in accordance with one embodiment of the present invention. The substrate body 100 may be a wafer without other films and features. The substrate body 100 may also have various films and features resulting from preprocessing. Figure 1A The substrate 105 is face down with the front side 110 of the substrate facing down. exist Figure 1A , there is a barrier layer 101 , such as tantalum (Ta) and / or tantalum nitride (TaN) covering the substrate front side 110 and the outermos...

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Abstract

The various embodiments described in the specification provide improved mechanisms of removal of unwanted deposits on the bevel edge to improve process yield. The embodiments provide apparatus and methods of treating the bevel edge of a copper plated substrate to convert the copper at the bevel edge to a copper compound that can be wet etched with a fluid at a high etch selectivity in comparison to copper. In one embodiment, the wet etch of the copper compound at high selectivity to copper allows the removal of the non not volatile copper at substrate bevel edge in a wet etch processing chamber. The plasma treatment at bevel edge allows the copper at bevel edge to be removed at precise spatial control to about 2 mm or below, such as about 1 mm, about 0.5 mm or about 0.25 mm, to the very edge of substrate. In addition, the apparatus and methods described above for bevel edge copper removal do not have the problems of copper etching fluid being splashed on the device regions to cause defects and thinning of copper films. Therefore, device yield can be greatly improved.

Description

technical field [0001] The present invention relates generally to substrate fabrication techniques and in particular to apparatus and methods for converting bevel edged films, such as copper, into liquid soluble materials using plasma exposure. The converted film at the bevel edge is then removed by a wet etch chemistry with high etch selectivity. Background technique [0002] Plasma is often used in the processing of substrates, eg semiconductor substrates (or wafers) or glass plates such as for flat panel display manufacturing. During substrate processing, the substrate (or wafer) is divided into die, or rectangular regions. Each of the plurality of dies becomes an integrated circuit. The substrate is then processed in steps in which material is selectively removed (or etched) and deposited. [0003] Copper is becoming the conductor of choice for many integrated circuit manufacturers' device interconnect lines due to its lower resistivity than aluminum, improved electro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/302H01L21/30
CPCH01L21/32134H01J2237/334H01J37/32532H01L21/02087H01L21/6708
Inventor 安德鲁·D·贝利三世金允尚
Owner LAM RES CORP