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Electrode equipment and detection method

A detection method, voltage detection technology, applied to circuits, fluid pressure measurement by changing ohmic resistance, electrical components, etc., can solve the problems of reducing production risks, not being detected in time, and hole blockage, etc., to achieve low power consumption and volume Small, power consumption and no radiation effect

Active Publication Date: 2010-11-17
K TRONICS (SUZHOU) TECH CO LTD +1
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Problems solved by technology

[0005] The invention provides an electrode device and a detection method, which are used to solve the problem in the prior art that the hole arranged on the upper electrode cannot be detected in time due to blockage, and eliminate the MURA, repeat caused by the blockage of the upper electrode. defect and other phenomena, and can further detect whether the glass substrate placed on the pressure-sensitive film is damaged or cracked, reducing production risks.

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  • Electrode equipment and detection method
  • Electrode equipment and detection method
  • Electrode equipment and detection method

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Embodiment Construction

[0013] The electrode device of the present invention includes: an upper electrode, a lower electrode and a voltage detection module, the upper electrode and the lower electrode are arranged opposite to each other, and a pressure-sensitive film is provided on the surface of the lower electrode opposite to the upper electrode, and the voltage detection module is based on the pressure-sensitive film. The resistance change caused by the pressure change of the film is obtained, and the corresponding voltage change value is obtained, and the detection processing is performed according to the voltage change value.

[0014] The electrode device of the present invention is provided with a pressure-sensitive film on the lower electrode of the PECVD / etching device. According to the principle of air pressure sensing, the pressure change on the surface of the pressure-sensitive film can produce a voltage change. By detecting this voltage change, it is possible to monitor the clogging of th...

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Abstract

The invention relates to electrode equipment and a detection method. The electrode equipment comprises an upper electrode, a lower electrode and a voltage detection module, wherein the upper electrode and the lower electrode are arranged oppositely; a voltage-sensitive thin film is arranged on a surface that the lower electrode is opposite to the upper electrode; the voltage detection module is used for acquiring a corresponding voltage change value according to the resistance change generated by the pressure change born by the voltage-sensitive thin film and carrying out detection processing according to the voltage change value. In the detection method, the voltage detection module is used for detecting the voltage change generated by the pressure change born by the voltage-sensitive thin film and transmitting an alarm signal when the voltage change value exceeds a preset value. The invention puts an end to MURA, repeat defect and other phenomena caused by the blockage of the upper electrode, can detect whether a glass substrate placed on the voltage-sensitive thin film has damages or cracks or not, and reduces the production risk.

Description

technical field [0001] The invention relates to an electrode device and a detection method, belonging to the technical field of liquid crystal display manufacturing. Background technique [0002] With the continuous progress of the semiconductor industry, semiconductor manufacturing technology has also developed rapidly. Among them, thin film transistor liquid crystal display (Thin Film Transistor Liquid Crystal Display, hereinafter referred to as: TFT-LCD) is widely used due to its characteristics of small size, low power consumption and no radiation. [0003] In the existing manufacturing process of TFT-LCD or semiconductor devices, flat-panel plasma-enhanced chemical vapor deposition (PECVD) is widely used in the process of non-metallic film formation, and the corresponding plasma etching method is widely used in Etching process of non-metallic films. In the process of film formation, the substrate is placed on the lower electrode with a temperature control device, the ...

Claims

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Application Information

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IPC IPC(8): G02F1/1343G02F1/13G01L9/06G01N27/20H01L23/544H01L21/283
Inventor 李丽王威
Owner K TRONICS (SUZHOU) TECH CO LTD
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