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MOCVD (Metal-organic Chemical Vapor Deposition) growth method of nonpolar a-side GaN film on r-side based Al2O3 substrate

A thin film growth, non-polar technology, applied in the field of microelectronics, can solve the problems of increased process flow, low efficiency, etc., achieve high efficiency, simple steps, and improve the quality of GaN thin films

Active Publication Date: 2012-03-28
云南凝慧电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in this method of combining LEO and pulse, after the GaN substrate is grown, SiO 2 The process of deposition and photolithography greatly increases the process flow, and the efficiency is low

Method used

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  • MOCVD (Metal-organic Chemical Vapor Deposition) growth method of nonpolar a-side GaN film on r-side based Al2O3 substrate
  • MOCVD (Metal-organic Chemical Vapor Deposition) growth method of nonpolar a-side GaN film on r-side based Al2O3 substrate
  • MOCVD (Metal-organic Chemical Vapor Deposition) growth method of nonpolar a-side GaN film on r-side based Al2O3 substrate

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Experimental program
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Effect test

Embodiment 1

[0023] Embodiment 1, the realization steps of the present invention are as follows:

[0024] Step 1, performing heat treatment on the substrate substrate.

[0025] Al 2 o 3 The substrate is placed in the metal organic compound chemical vapor deposition MOCVD reaction chamber, and the mixed gas of hydrogen and ammonia is introduced into the reaction chamber, and the vacuum degree in the reaction chamber is less than 2×10 -2 Torr, under the condition that the substrate heating temperature is 1100° C., the time is 8 minutes, and the pressure of the reaction chamber is 40 Torr, heat treatment is performed on the substrate.

[0026] Step 2, growing a 500-650°C low-temperature AlN nucleation layer.

[0027] Lower the temperature of the heat-treated substrate to 620°C, feed the aluminum source with a flow rate of 15 μmol / min, hydrogen gas with a flow rate of 1200 sccm and ammonia gas with a flow rate of 1500 sccm into the reaction chamber, and grow the thickness under the conditio...

Embodiment 2

[0040] The realization steps of the present invention are as follows:

[0041] Step A, performing heat treatment on the base substrate.

[0042] Al 2 o 3 The substrate is placed in the metal organic compound chemical vapor deposition MOCVD reaction chamber, and the mixed gas of hydrogen and ammonia is introduced into the reaction chamber, and the vacuum degree in the reaction chamber is less than 2×10 -2 Torr, under the condition that the substrate heating temperature is 900° C., the time is 5 minutes, and the reaction chamber pressure is 20 Torr, heat treatment is performed on the substrate.

[0043] Step B, growing an AlN layer at a low temperature of 500°C.

[0044] Lower the temperature of the heat-treated substrate to 500°C, feed the aluminum source with a flow rate of 5 μmol / min, hydrogen gas with a flow rate of 1200 sccm, and ammonia gas with a flow rate of 1000 sccm into the reaction chamber, and grow thickness under the condition of maintaining a pressure of 20 Tor...

Embodiment 3

[0057] The realization steps of the present invention are as follows:

[0058] Step I, heat-treating the base substrate.

[0059] Al 2 o 3 The substrate is placed in the metal organic compound chemical vapor deposition MOCVD reaction chamber, and the mixed gas of hydrogen and ammonia is introduced into the reaction chamber, and the vacuum degree in the reaction chamber is less than 2×10 -2 Torr, under the condition that the substrate heating temperature is 1200° C., the time is 10 min, and the pressure of the reaction chamber is 760 Torr, heat treatment is performed on the substrate.

[0060] Step II, growing a 500-650°C low-temperature AlN nucleation layer.

[0061] Lower the temperature of the heat-treated substrate to 650°C, feed the aluminum source with a flow rate of 100 μmol / min, hydrogen gas with a flow rate of 1200 sccm, and ammonia gas with a flow rate of 10000 sccm into the reaction chamber, and grow the thickness under the condition of maintaining a pressure of 7...

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Abstract

The invention discloses a growth method of a nonpolar a-side GaN film on a based r-side Al2O3 substrate, which mainly solves the problems of poorer material quality and surface topography in the growth of a conventional nonpolar material. The growth method comprises the following growth steps of: 1. placing the r-side Al2O3 substrate into an MOCVD reaction chamber, and carrying out heat processing on the substrate; 2. growing a low-temperature AlN layer with the thickness of 20-200nm and the temperature of 500-650 DEG C on the r-side Al2O3 substrate; 3. growing a high-temperature AlN layer with the thickness of 50-200nm and the temperature of 1000-1150 DEG C on the low-temperature AlN layer; 4. growing a GaN layer with the thickness of 500-2000nm and the temperature of 1000-1150 DEG C on the high-temperature AlN layer; 5. growing a TiN layer with the thickness of 1-30nm on the high-temperature GaN layer; 6. growing a GaN layer with the thickness of 500-5000nm and the temperature of 1000-1150 DEG C on the TiN layer; 7. growing a TiN layer with the thickness of 1-30nm on the GaN layer; and 8. growing a GaN layer with the thickness of 500-5000nm and the temperature of 1000-1150 DEG Con the TiN layer. The invention has the advantages of simple process and low defect and can be used for manufacturing nonpolar a-side GaN light-emitting diodes.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a method for growing semiconductor materials, in particular to an r-surface Al 2 o 3 The metal organic compound chemical vapor phase epitaxy MOCVD growth method of nonpolar a-plane GaN semiconductor material on the substrate can be used to make nonpolar a-plane GaN-based semiconductor devices. technical background [0002] Gallium nitride and III-V nitrides have made great progress in the fields of optoelectronics and microelectronics. This material can work at high temperatures and in relatively harsh environments. It has very broad application prospects and is a current research hotspot. Conventional GaN is mainly Al on the polar c-plane 2 o 3 Since there is a very strong spontaneous polarization and piezoelectric polarization on the c-plane GaN, and there is a high-density and high-mobility two-dimensional electron gas 2DEG at the interface of the AlGaN / GaN heterojun...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205C23C16/44C30B29/40
Inventor 许晟瑞郝跃周小伟张进成史林玉陈珂杨传凯欧新秀
Owner 云南凝慧电子科技有限公司
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