Photoetching method of graphical sapphire substrate

Abstract

The invention discloses a photoetching method of a graphical sapphire substrate. The method comprises the following steps: depositing a film on the graphical sapphire substrate, and performing particle removing and low-temperature drying processing on the film; under the condition that a rotation accelerated speed is not changed, adding a liquid-state photoresist and an adhesion agent in the middle of a substrate film surface drop by drop, uniformly covering the surface of a wafer with the liquid photoresist, and performing baking so as to form a photoresist membrane; projecting a graphic file on a mask on the substrate photoresist membrane, setting an exposure condition, and performing exposure processing; and under the condition that the rotation accelerated speed is not changed, spraying a developing solvent on the surface of the substrate photoresist membrane to perform development processing, and after the development is completed, performing development examination. According to the invention, the method has the following advantages: the exposure precision grade is high, the technical repeatability is good, the line dislocation density is low, the inner quantum density is high, the resolution is high, the finished product qualified rate and the yield are high, the graphical dimension of an obtained finished product is accurate, the integrity is good, the performance is stable, and the application prospect is wide.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a photolithographic method for patterning a sapphire substrate. Background technique [0002] Photolithography is the process of removing specific parts of the film on the wafer surface through a series of production steps. After this, a film with a micropatterned structure remains on the wafer surface. Through the photolithography process, what is finally reserved on the wafer is the characteristic pattern part. The photolithography process uses the combination of photocopying and chemical etching to produce precise, fine and complex thin-layer patterns on the surface of the workpiece. Although the principle of photolithography was known in the early 19th century, it has not been applied for a long time due to the lack of good photoresists. It was not until the 1950s that Kodak photoresist (KPR) with high resolution and excellent corrosion resistance was m...

AI Technical Summary

Problems solved by technology

However, the existing photolithography methods for patterning sapphire substrates in China often have problems such as high linear dislocation density, low internal quantum density, low resolution, low productivity, poor pattern consistency, and low product qualification rate.

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