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Manufacturing device for silicon carbide single crystal

A technology of silicon carbide single crystal and manufacturing device, which is applied in the direction of single crystal growth, single crystal growth, post-processing device, etc., can solve the problem of sufficient particle removal and the like

Active Publication Date: 2010-12-08
DENSO CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in the above structure, although the airflow can be prevented from directly touching the SiC single crystal substrate by the baffle, the particles cannot be sufficiently removed by the baffle, so the particles still reach the SiC single crystal substrate by the airflow.

Method used

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  • Manufacturing device for silicon carbide single crystal
  • Manufacturing device for silicon carbide single crystal
  • Manufacturing device for silicon carbide single crystal

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no. 1 Embodiment approach

[0038] figure 1 It is a sectional view of the SiC single crystal manufacturing apparatus of this embodiment. Hereinafter, the structure of the SiC single crystal manufacturing apparatus will be described with reference to this figure.

[0039] figure 1 The shown SiC single crystal manufacturing apparatus 1 supplies SiC source gas 3 containing Si and C through an inflow port 2 provided at the bottom, and discharges it through an upper outflow port 4 . A SiC single crystal 6 is crystal-grown on a seed crystal 5 made of a SiC single crystal substrate.

[0040] The SiC single crystal manufacturing apparatus 1 is equipped with a vacuum container 7, a first heat insulating material 8, a heating container 9, a reaction container 10, a pipe material 11, a second heat insulating material 12, a first heating device 13, and a second heating device. 14.

[0041] The vacuum container 7 has a hollow cylindrical shape, and has a structure capable of introducing argon gas and the like, ho...

no. 2 Embodiment approach

[0066] Next, a second embodiment will be described. This embodiment is further provided with a baffle plate compared to the first embodiment, and other points are the same as the first embodiment, so only the different parts will be described.

[0067]FIG. 3 is a schematic view of the heating container 9 included in the SiC single crystal manufacturing apparatus of this embodiment, FIG. 3( a ) is a schematic cross-sectional view, and FIG. 3( b ) is a schematic perspective view. Furthermore, other parts of the SiC single crystal manufacturing apparatus are the same as figure 1 The device of the first embodiment shown is the same.

[0068] As shown in Fig. 3 (a), (b), the heating vessel 9 is provided with baffles 9d to 9f aligned with the baffles 9d to 9f in a direction perpendicular to the central axis of the hollow cylindrical member 9c. Shutters (sub-baffles) 9g, 9h, and 9i extend in a direction that intersects and also crosses the radial direction of the central axis of th...

no. 3 Embodiment approach

[0073] Next, a third embodiment of the present invention will be described. In this embodiment, a plurality of baffles 9g to 9i described in the second embodiment are defined, and other points are the same as the second embodiment, so only different parts will be described.

[0074] Figure 4 It is a schematic cross-sectional view of the heating vessel 9 included in the SiC single crystal manufacturing apparatus of the present embodiment. Furthermore, other parts of the SiC single crystal manufacturing apparatus are the same as figure 1 The device of the first embodiment shown is the same.

[0075] Such as Figure 4 As shown, in the heating container 9, the baffle plates 9g-9i which are parallel to the center axis of the hollow cylindrical member 9c are each plural, and in this embodiment, there are three pieces each. The baffles 9g to 9i are concentrically arranged around the central axis of the hollow cylindrical member 9c. The intervals between the respective baffles 9...

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Abstract

A manufacturing device of a silicon carbide single crystal includes: a reaction chamber; a seed crystal arranged in the reaction chamber; and a heating chamber. The seed crystal is disposed on an upper side of the reaction chamber, and the gas is supplied from an under side of the reaction chamber. The heating chamber is disposed on an upstream side of a flowing passage of the gas from the reaction chamber. The heating chamber includes a hollow cylindrical member, a raw material gas inlet, a raw material gas supply nozzle and multiple baffle plates. The inlet introduces the gas into the hollow cylindrical member. The nozzle discharges the gas from the hollow cylindrical member to the reaction chamber. The baffle plates are arranged on the flowing passage of the gas between the inlet and the nozzle.

Description

technical field [0001] The present invention relates to a manufacturing device of silicon carbide single crystal. Background technique [0002] Conventionally, in the production of SiC single crystals, when fine particles are mixed into SiC single crystals, dislocations and crystal defects such as micropipes and polytypes are generated starting from the fine particles. The reason is that when the raw material gas is introduced, the particles ride the airflow and float from the upstream side, and when the crystal grows, the particles will adhere to the growth surface and then enter the growing crystal. Therefore, a manufacturing apparatus capable of suppressing the incorporation of fine particles into the SiC single crystal is desired. [0003] As such an apparatus for producing a silicon carbide single crystal capable of suppressing the incorporation of fine particles, for example, a production apparatus having a structure disclosed in JP-A-2003-137695 has been proposed. S...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36
CPCC30B29/36C30B25/14C23C16/4402C30B35/00
Inventor 小岛淳木藤泰男索尼娅·安吉利斯安布罗焦·佩斯纳提约瑟夫·塔伦齐
Owner DENSO CORP
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