Configurable radio-frequency power amplifier and radio-frequency transmitting front-end module with same
A technology of radio frequency power and front-end modules, applied in power amplifiers, sustainable buildings, climate sustainability, etc., can solve the problems of high cost, low integration, and large area of mobile terminals, and achieve the reduction of circuit board area and reduction Quantity, the effect of reducing manufacturing cost
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[0035] Example one
[0036] Such as figure 2 Shown is the implementation of a radio frequency power amplifier with a configurable output impedance matching network proposed by the present invention. The radio frequency power amplifier includes a radio frequency power amplifier die 201, a first inductor L1, a second inductor L2, a third inductor L3, a first capacitor C1, a second capacitor C2, a third capacitor C3, a radio frequency switch 112, a radio frequency switch 113, and an antenna 115. The input end of the radio frequency power amplifier is connected to the radio frequency input signal (RF IN ), the output terminal is connected to one end of the first inductor L1 and the second inductor L2; the other end of the first inductor L1 is connected to one end of the third inductor L3 and one end of the third capacitor C3; the other end of the third inductor L3 is connected to DC power supply terminal V of RF power amplifier CC The other end of the third capacitor C3 is connec...
Example Embodiment
[0042] Example two
[0043] The structure of the first multi-power mode radio frequency transmitting front-end module proposed by the present invention is as follows image 3 Shown. The entire radio frequency transmitting front end is integrated into a single module, which includes a first chip 203 and a second chip 204. The first chip 203 integrates a high-power mode RF power amplifier die 101 and its output matching network 102, and a configurable RF power amplifier 200 with a configurable output impedance matching network 202. The configurable RF power amplifier 200 includes a configurable output impedance. The matching network 202 and the configurable radio frequency power amplifier die 201, the bias voltage of the configurable radio frequency power amplifier die 201 can be changed; the first chip 203 is usually manufactured by a GaAs HBT process. The power mode controller 110 and the radio frequency switch 111 are integrated on the second chip 204. The second chip is manuf...
Example Embodiment
[0045] Example three
[0046] The structure of the second multi-power mode radio frequency transmitting front-end module proposed by the present invention is as follows Figure 4 Shown. The entire RF transmitting front end is integrated into a single module, which includes a third chip 205 and a fourth chip 206. The third chip 205 integrates a high-power mode radio frequency power amplifier die 101 and a configurable radio frequency power amplifier die 201; the third chip 205 is usually manufactured using a GaAs HBT process. The fourth chip 206 integrates the power mode controller 110, the radio frequency switch 111, the output matching network 102 of the high power mode radio frequency power amplifier, and the configurable output impedance matching network 202 of the configurable radio frequency power amplifier 200. The fourth chip is manufactured using a silicon-on-insulator (SOI) process. Because SOI is compatible with the traditional CMOS process on the one hand, it can be ...
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