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Plasma immersion implantation device

A technology of immersion implantation and plasma, which is applied in the field of semiconductor processing technology and equipment, can solve the problems of uneven ion implantation and achieve the effect of uniform ion implantation

Active Publication Date: 2010-12-22
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The technical problem to be solved by the present invention is to provide a plasma immersion implantation device to solve the problem of uneven ion implantation caused by the ion focusing effect generated by the bias electric field

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Embodiment Construction

[0030] The technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0031] Such as Figure 4 As shown, the embodiment of the present invention provides a plasma immersion injection device, including a gas source, a power source, a working chamber, a substrate stage 11 and a vacuum system, the working chamber 70 includes a plasma source, and the substrate stage 11 is The gate electrode 50 is provided parallel to the substrate stage 11 .

[0032] Figure 4 The plasma source in the shown device is a planar inductively coupled plasma source (InductivelyCoupled Plasma, ICP); Figure 5 The plasma source in the shown device is a cylindrical inductively coupled plasma source; in addition, the plasma source may also be an Electron Cyclotron Resonance (ECR) plasma source. The shape of the gate electrode 50 is circular, and the diameter of the gate electrode 50 is R sdj , Working chamber 70...

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Abstract

The invention relates to the fields of semiconductor processing technology and equipment, in particular to a plasma immersion implantation device which comprises an air source, a power source, a working chamber, a substrate platform and a vacuum system, wherein a gate electrode is arranged above the substrate platform. By additionally arranging the gate electrode in a traditional device, electric-field distribution above the substrate platform, especially above a substrate, is changed into electric-field distribution between two parallel plates; when the gate electrode is earthed, bias electric fields above the substrate are distributed vertical to the surface of the substrate and are parallel and even, so that ions passing through the gate electrode is vertically implanted into the substrate under the acceleration action of the electric fields without implanted ion focusing effect, and thus, ions can be implanted evenly.

Description

technical field [0001] The invention relates to the field of semiconductor processing technology and equipment, in particular to a plasma immersion implantation device. Background technique [0002] In the semiconductor process, the mainstream impurity doping technology adopts the beamline ion implantation technology (IonImplantation, II). This method generates plasma by the ion source, and then extracts the required ion components through mass spectrometry analysis. Ions are accelerated to a certain energy and implanted into a semiconductor substrate (such as a silicon wafer). This method requires complex mass spectrometry and scanning devices, low injection efficiency, complex structure, and extremely high cost. [0003] With the further shrinking of the feature size of integrated circuits, the ion implantation energy needs to be further reduced to below 1000 electron volts (sub-KeV). Negative effect. Therefore, a novel plasma immersion implantation technique (Plasma Im...

Claims

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Application Information

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IPC IPC(8): C30B31/22
Inventor 汪明刚夏洋李超波刘杰李勇滔陈瑶赵丽莉
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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