Method and device for detecting focal plane change of exposure machine table

A technology of focal plane and exposure machine, which is applied in the direction of photolithography exposure device, microlithography exposure equipment, etc., can solve the problems of inaccuracy and time-consuming, and achieve the effect of high detection efficiency, high accuracy, accurate and efficient determination
CN101930180AInactive Publication Date: 2010-12-29SEMICON MFG INT (SHANGHAI) CORP +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SEMICON MFG INT (SHANGHAI) CORP
Publication Date
2010-12-29
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a method for detecting focal plane change of an exposure machine table, which comprises the following steps: carrying out exposure and development on a control wafer by using a photomask to form a first-layer overlay precise measurement mark (OVL mark); carrying out exposure and development for a second time by using the photomask with a wedge to form a second-layer OVL mark on the first-layer OVL mark, wherein the photomask with a wedge resolves the focal length Z-axis component into an X-axis component and a Y-axis component; measuring the overlay degree of the first-layer OVL mark and the second-layer OVL mark by using an overlay precise measuring instrument to obtain the overlay value of the first-layer OVL mark and the second-layer OVL mark in the X-axis direction and the Y-axis direction according to the change of the focal length variable delta Z in the second exposure; and determining whether the focal plane is changed according to the intersection point of the overlay value curve, which is formed by delta Z and X-axis direction, and the overlay value curve formed by delta Z and Y-axis direction. The invention also discloses an exposure machine table for detecting the focal plane change of the exposure machine table. The method and the device can be used for precisely determining whether the focal plane of the exposure machine table is changed with high efficiency.
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Description

technical field

[0001] The invention relates to the technical field of lithography for semiconductor manufacturing, in particular to a method and device for detecting changes in the focal plane of an exposure machine. Background technique

[0002] At present, in semiconductor process technology, photolithography technology is becoming more and more important with the improvement of critical dimension technology.

[0003] The stability of the exposure machine is affected by many aspects, such as the offset of the wafer platform or lens on the exposure machine, the flattening degree of the wafer surface, the change of the laser wavelength, and the environment, etc., will cause the exposure machine to The focal plane (focal length) of the exposure machine changes, that is, the real focal length value of the exposure machine is different from the initial set value, which will cause the size and profile of the exposed wafer to be different from the preset value.

[0004] In orde...

Claims

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