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Reference voltage regulator

A reference voltage and regulator technology, applied in instruments, static memory, digital memory information, etc., can solve the problems of consumption, low burden efficiency, high power, etc., and achieve the effect of small area, high accuracy, and fast response time

Active Publication Date: 2010-12-29
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The added burden of the internal generator is very inefficient and consumes a lot of power

Method used

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Embodiment Construction

[0026] The following describes the preferred embodiment of the present invention. Each embodiment is used to illustrate the principles of the present invention, but not to limit the present invention. The scope of the invention should be determined by the terms of the appended claims.

[0027] The present invention provides a reference voltage (VREF) regulator architecture capable of generating an accurate reference voltage level in an eDRAM and using the reference level for VSS sensing. VSS sensing works at lower VDD values ​​and increases the current through the sense amplifier. The reference generator is a voltage generator capable of accurate "sample and correct". In the present invention, a "sample / correct" VREF generator is used to generate a reference level for VSS sensing of the eDRAM. The same elements are denoted by the same reference symbols in the various embodiments of the present invention.

[0028] figure 1 It is a schematic diagram of an eDRAM sensing arch...

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Abstract

A reference voltage regulator for an embedded dynamic random access memory (eDRAM) employing VSS-sensing with a reference level includes an oscillator, a control block, a reference generator, a comparator, a pulse generator, a driver, and a reference voltage output, where the oscillator sends requests for sampling and correction to the control block between accesses of the eDRAM, the control block sends a pulse defining a time interval during which sampling and correction occurs to the pulse generator, the reference generator provides the reference level for comparison by the comparator with a sampling of the reference voltage output, the comparator decides if the reference voltage output requires correction and sends a correction request to the pulse generator if necessary, the pulse generator produces a correction pulse for the driver according to the correction request from the comparator, and the driver adjusts the reference voltage output during the correction pulse.

Description

technical field [0001] The present invention generally relates to a reference voltage regulator for an embedded dynamic random access memory (eDRAM), and more to enabling the eDRAM to generate an accurate reference voltage level when performing VSS sensing. Background technique [0002] To achieve fast sensing and allow operation in a short period of time, it is not sufficient to use a reference voltage at half VDD. Fast sensing can only be achieved by using a large drain-source voltage (Vds) across the transistors of the sense amplifier. The solution includes using VSS sensing or VDD sensing depending on the shape of the access transistor of the memory cell. For example, an n-type access device may employ VSS sensing. When using VSS sensing, a stable reference level close to VSS is required. There are two known ways to generate this reference level: using an analog regulator or using a reference unit. Each method has its advantages and disadvantages. [0003] The gener...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C7/06
CPCG11C11/4074G11C11/4094G11C11/4099
Inventor 穆罕默德·努莫史奇·罗曼诺夫斯基
Owner TAIWAN SEMICON MFG CO LTD