High-power converting module

Abstract

The invention relates to a high-power converting module, wherein an IGBT (Insulated Gate Bipolar Translator) module, a heat radiation fan and a capacitor bank are packed in a shell; AC (Alternating Current) and DC (Direct Current) end interfaces, an IGBT module control interface and a power supply interface of the heat radiation fan are arranged on the shell; all the interfaces are insulated withthe shell; a heat radiation board of the IGBT module and the capacitor bank are parallelly fixed on the upper part of the shell; the heat radiation fan is fixed in the shell arranged below the IGBT module; the capacitor bank comprises a buffer capacitor and a support capacitor; the buffer capacitor and the support capacitor are parallelly connected with the direct current end of the IGBT module; the alternating current end of the IGBT module is connected with the alternating current end interface through a bus, and the direct current end of the IGBT module is connected with the direct currentend interface through the bus; a working power supply of the heat radiation fan is supplied by the power supply interface of the heat radiation fan; heat radiation vent holes are arranged on the shell corresponding to the arrangement position of the IGBT module; air intakes are arranged on the shell corresponding to an air entry of the heat radiation fan; and an air outlet of the heat radiation fan points to the heat radiation board of the IGBT module.

Description

technical field [0001] The invention relates to a modular electrical component, especially a high-power converter module used in the inverter conversion of power supply. Background technique [0002] A power module is generally defined as a device that contains more than one semiconductor chip and provides a heat dissipation path separate from the electrical path. The power module entered the market in 1975 and has become a successful case. In almost all power electronic systems, the power module is an important building block. Especially today's wind power and electric vehicle markets require power modules with high power density. [0003] IGBT (Insulated Gate Bipolar Transistor), an insulated gate bipolar transistor, is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), and has a MOSFET The advantages of high input impedance and low conduction voltage drop of GTR. ...

AI Technical Summary

Problems solved by technology

It is widely used in frequency conversion period and inverter. At present, IGBT module is generally used as a column component, and it is difficult to install. Due to the characteristics of fast and frequent switching of IGBT module, the problem of heat dissipation is more prominent. At present, IGBT module is used to construct the overall power module. , so far no reports

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