Unlock instant, AI-driven research and patent intelligence for your innovation.

Antireflective film SiNx:H surface in-situ NH3 plasma treatment method

A plasma and treatment method technology, applied in the field of solar cell manufacturing process, can solve the problems of over-plating, poor surface appearance of solar cells, degradation of solar cell performance, etc., so as to be suitable for large-scale production, compatible with production processes, and reduce over-plating problems Effect

Inactive Publication Date: 2012-05-23
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although silicon dioxide has a relatively good passivation effect and is widely used in high-efficiency silicon-based solar cells, its refractive index is relatively low at 1.46, so the anti-reflection effect is not good.
The commonly used anti-reflection film is SiN x :H thin film, and it is widely used as a material, but its disadvantage is: the overplating problem after electroless plating or electroplating, which affects the appearance and performance of solar cells to a large extent
This leads to poor appearance of the surface of the solar cell and a decrease in the performance of the solar cell due to the blocking of sunlight by the metal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Antireflective film SiNx:H surface in-situ NH3 plasma treatment method
  • Antireflective film SiNx:H surface in-situ NH3 plasma treatment method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] 1.SiN x :H film deposition: first deposit SiN on crystalline silicon solar cells by conventional plasma-enhanced chemical vapor method (PECVD) x :H film, the thickness and refractive index are determined according to the requirements of the emission reduction layer.

[0024] 2.N 2 Plasma bombardment: SiN x : Immediately after H deposition, in situ with N 2 Plasma bombardment of SiN x :H surface for 10 seconds, the purpose is to remove SiN x : Weaker amine bonds, -NH, Si-H bonds, etc. in H films. This one-step process can increase the density of the film and reduce pinholes.

[0025] 3. NH 3 or NH 3 and N 2 Plasma treatment: followed by in situ NH 3 or NH 3 and N 2 Plasma surface treatment for 10 s to make unsaturated Si + bond with NH 3 -N(-NH 2 , -NH, -N) are bonded to form Si-N bonds, resulting in the formation of more Si-N bonds in the film, reducing the excess silicon component in the film. In this process, the bombardment of high-energy plasma also ...

Embodiment 2

[0027] 1.SiN x :H film deposition: first deposit SiN on crystalline silicon solar cells by conventional plasma-enhanced chemical vapor method (PECVD) x :H film, the thickness and refractive index are determined according to the requirements of the emission reduction layer.

[0028] 2.N 2 Plasma bombardment: SiN x : Immediately after H deposition, in situ with N 2 Plasma bombardment of SiN x :H surface for 15 seconds, the purpose is to remove SiN x : Weaker amine bonds, -NH, Si-H bonds, etc. in H films. This one-step process can increase the density of the film and reduce pinholes.

[0029] 3. NH 3 or NH 3 and N 2 Plasma treatment: followed by in situ NH 3 or NH 3 and N 2 Plasma surface treatment for 15 s to make unsaturated Si + bond with NH 3 -N(-NH 2 , -NH, -N) are bonded to form Si-N bonds, resulting in the formation of more Si-N bonds in the film, reducing the excess silicon component in the film. In this process, the bombardment of high-energy plasma also ...

Embodiment 3

[0031] 1.SiN x :H film deposition: first deposit SiN on crystalline silicon solar cells by conventional plasma-enhanced chemical vapor method (PECVD) x :H film, the thickness and refractive index are determined according to the requirements of the emission reduction layer.

[0032] 2.N 2 Plasma bombardment: SiN x : Immediately after H deposition, in situ with N 2 Plasma bombardment of SiN x :H surface for 12 seconds, the purpose is to remove SiN x : Weaker amine bonds, -NH, Si-H bonds, etc. in H films. This one-step process can increase the density of the film and reduce pinholes.

[0033] NH 3 or NH 3 and N 2 Plasma treatment: followed by in situ NH 3 or NH 3 and N 2 Plasma surface treatment for 20 s to make unsaturated Si + bond with NH 3 -N(-NH 2 , -NH, -N) are bonded to form Si-N bonds, resulting in the formation of more Si-N bonds in the film, reducing the excess silicon component in the film. In this process, the bombardment of high-energy plasma also occ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
refractive indexaaaaaaaaaa
Login to View More

Abstract

The invention discloses an antireflective film SiNx:H surface in-situ NH3 plasma treatment method, which is characterized by comprising the following steps of: depositing a SiNx:H antireflective film on the surface of a silicon substrate of a crystalline silicon solar cell by using a conventional plasma enhanced chemical vapor method; performing surface physical bombardment by using N2 plasma in situ for 10 to 15 seconds to remove weakly bonded -N(-NH2,-NH) of the SiNx:H antireflective film and break Si-H bonds to obtain non-bonded Si+; and performing surface treatment by using NH3 or NH3 andN2 mixed plasma for 10 to 20 seconds to make the non-bonded Si+ and N+ in the silicon nitride film to form Si-N bonds, wherein the SiNx:H antireflective film is a part for forming an antireflective layer on the surface of a solar cell.

Description

technical field [0001] The invention relates to a solar cell manufacturing process, in particular to an anti-reflection film SiN x : H surface treatment method. Background technique [0002] At present, the deposition of anti-reflection passivation film has become one of the production processes of industrialized crystalline silicon solar cells. For silicon-based solar cells, the anti-reflection coating materials used mainly include thin-film materials such as silicon dioxide, titanium oxide, and silicon nitride. Although silicon dioxide has a relatively good passivation effect and is widely used in high-efficiency silicon-based solar cells, its refractive index of 1.46 is relatively low, so the anti-reflection effect is not good. In addition, the preparation process of silicon oxide anti-reflection film solar cells is a high-temperature process, which increases the production cost. At the same time, the high-temperature process will promote the diffusion of harmful impuri...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/44C23C16/34
Inventor 周春兰李涛王文静
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI