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Method of manufacturing oxygen-nitrogen-oxygen laminated structure and gate

A technology of a laminated structure and a manufacturing method, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, semiconductor devices, etc., to achieve the effects of increasing the equivalent oxide thickness, increasing the threshold voltage, and reducing charge loss

Inactive Publication Date: 2011-01-26
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
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Problems solved by technology

[0005] The above reliability test results all reflect that the reliability of the existing semiconductor memory needs to be further improved

Method used

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  • Method of manufacturing oxygen-nitrogen-oxygen laminated structure and gate
  • Method of manufacturing oxygen-nitrogen-oxygen laminated structure and gate
  • Method of manufacturing oxygen-nitrogen-oxygen laminated structure and gate

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Embodiment approach

[0029] refer to figure 2 As shown, according to an embodiment of the method for manufacturing the oxygen-nitrogen-oxygen stack structure of the present invention, it includes:

[0030] Step s1, forming a first oxide layer on the substrate;

[0031] Step s2, using ammonia gas and dichlorosilane to form a first nitride layer on the first oxide layer, the flow ratio of ammonia gas and dichlorosilane being greater than or equal to 5:1 and less than 10:1;

[0032] Step s3, performing oxidation treatment on the first nitride layer to partially oxidize the first nitride layer to form a first nitride oxide layer;

[0033] Step s4, forming a second oxide layer on the first oxynitride layer;

[0034] Step s5, annealing the formed laminated structure, the annealing temperature is greater than 800° C. and less than or equal to 1050° C., and the annealing time is greater than or equal to 60 minutes.

[0035] In the above embodiment, when forming the first nitrided layer, the flow ratio...

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Abstract

The invention discloses a method of manufacturing an oxygen-nitrogen-oxygen laminated structure and a gate. The method of manufacturing the oxygen-nitrogen-oxygen laminated structure comprises steps of: forming a first oxide layer on a substrate; forming a first nitride layer on the first oxide layer by employing ammonia and dichlorosilane which have a flow ratio of more than or equal to 5:1 and less than 10:1; subjecting the first nitride layer to oxidation treatment to partly oxidize the first nitride layer in order to form a first oxynitride; forming a second oxide layer on the first oxynitride; and annealing the formed laminated structure at a temperature of more than 800 DEG C and less than or equal to 1050 DEG C for more than or equal to 60 min. The method of manufacturing the oxygen-nitrogen-oxygen laminated structure and the gate improves the reliability of a device.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an oxygen-nitrogen-oxygen stack structure and a gate manufacturing method. Background technique [0002] In the manufacturing process of the semiconductor memory, the gate of the memory cell often adopts a structure containing an oxygen-nitrogen-oxygen (ONO) layer. figure 1 Shown is a schematic structural diagram of an existing storage unit. refer to figure 1 As shown, the memory cell includes: a substrate 10 ; an ONO layer 60 on the substrate 10 ; a control gate 71 on the ONO layer 60 ; spacers 81 and 82 on both sides of the ONO layer 60 and the control gate 71 . Wherein, the ONO layer 60 is a laminated structure, and the materials of each layer in the laminated structure are generally silicon oxide, silicon nitride, and silicon oxide from bottom to top. [0003] For example figure 1 The manufacturing process of the ONO layer of the memory cell shown is generally a...

Claims

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Application Information

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IPC IPC(8): H01L21/28H01L21/283H01L21/3105
Inventor 金泰圭权性佑
Owner SEMICON MFG INT (SHANGHAI) CORP
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