Production method of shallow trench isolation area
A technology for shallow trench isolation area and manufacturing method, which is applied in the field of shallow trench isolation area production, can solve problems such as low production efficiency, and achieve the effects of improving production efficiency and saving production time
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[0030] In order to make the object, technical solution, and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and examples.
[0031] Schematic flow chart of the specific manufacturing method of the shallow trench isolation process of the present invention, as image 3 As shown, it includes the following steps:
[0032] Step 31, thermally oxidize and grow an isolation oxide layer 101 on the semiconductor substrate 100 to protect the active region from chemical contamination during the subsequent process of removing the deposited silicon nitride layer 102, and to serve as a barrier between the silicon nitride layer and the silicon substrate A stress buffer layer between the semiconductor substrates is a silicon substrate;
[0033] Step 32, depositing a silicon nitride layer 102 on the surface of the isolation oxide layer 101; wherein, the silicon nitride layer deposited in thi...
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