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Production method of shallow trench isolation area

A technology for shallow trench isolation area and manufacturing method, which is applied in the field of shallow trench isolation area production, can solve problems such as low production efficiency, and achieve the effects of improving production efficiency and saving production time

Inactive Publication Date: 2011-02-09
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Wherein, the time spent in the first reaction chamber is about 420 minutes, and the time spent in the second reaction chamber is about 630 minutes. The transition time spent in the two reaction chambers is nearly 100 minutes, and the total time consumed is about 1150 minutes. Obviously, this leads to lower production efficiency.

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  • Production method of shallow trench isolation area
  • Production method of shallow trench isolation area
  • Production method of shallow trench isolation area

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Embodiment Construction

[0030] In order to make the object, technical solution, and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and examples.

[0031] Schematic flow chart of the specific manufacturing method of the shallow trench isolation process of the present invention, as image 3 As shown, it includes the following steps:

[0032] Step 31, thermally oxidize and grow an isolation oxide layer 101 on the semiconductor substrate 100 to protect the active region from chemical contamination during the subsequent process of removing the deposited silicon nitride layer 102, and to serve as a barrier between the silicon nitride layer and the silicon substrate A stress buffer layer between the semiconductor substrates is a silicon substrate;

[0033] Step 32, depositing a silicon nitride layer 102 on the surface of the isolation oxide layer 101; wherein, the silicon nitride layer deposited in thi...

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Abstract

The invention discloses a production method of a shallow trench isolation area, and the method comprises the following steps: sequentially depositing an isolation oxidation layer and a silicon nitride layer on a semiconductor substrate; etching a shallow trench; carrying out growth of liner silicon oxide and high-temperature thermal annealing of the shallow trench isolation area in a same reaction cavity; and filling a trench oxide in the shallow trench and polishing the trench oxide. The method carries out the growth of the liner silicon oxide and the high-temperature thermal annealing operation of the shallow trench isolation area in the same reaction cavity, thereby greatly saving production time and effectively improving production efficiency.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a method for manufacturing a shallow trench isolation region. Background technique [0002] At present, in the existing complementary metal-oxide-semiconductor (CMOS) technology, before forming the gate oxide layer, it is necessary to perform a shallow trench isolation process and define a CMOS active region on a semiconductor substrate. [0003] The specific manufacturing method of the shallow trench isolation process in the prior art includes the following steps: [0004] Step 11, thermally oxidize and grow an isolation oxide layer 101 on the semiconductor substrate 100 to protect the active region from chemical contamination during the subsequent process of removing the deposited silicon nitride layer 102, and to serve as a barrier between the silicon nitride layer and the silicon substrate A stress buffer layer between the semiconductor substrates ...

Claims

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Application Information

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IPC IPC(8): H01L21/762
Inventor 唐兆云
Owner SEMICON MFG INT (SHANGHAI) CORP
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