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Four-junction semiconductor solar photovoltaic cell chip

A photovoltaic cell and semiconductor technology, applied in the field of four-junction semiconductor solar photovoltaic cell chip structure, can solve the problems of energy absorption and utilization, low photoelectric conversion efficiency of solar cell chips, etc.

Inactive Publication Date: 2011-02-16
BEIJING UNIV OF TECH
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  • Description
  • Claims
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Problems solved by technology

[0003] However, the relatively low photoelectric conversion efficiency of existing solar cell chips restricts its further wide application in practical work and life. This is because the solar radiation energy flow is asymmetrically distributed in the peak wavelength of about 500nm, from the ultraviolet 200nm band to In the wide spectral range of the far-infrared 2600nm band, especially in my country's Tibet, Xinjiang and other high-altitude or high-latitude regions, the energy flow of solar radiation is concentrated in the short-wavelength visible light and ultraviolet light bands.
At present, the bandgap width of the top cell chip in the multi-junction solar cell chip is limited to about 1.9ev, and the corresponding absorption wavelength is about 650nm. When the wavelength of the short-wave part is far away from the absorption wavelength, the absorption efficiency decreases and the solar radiation energy flow is located in the visible light and ultraviolet light. The large amount of energy contained in the band has not been effectively absorbed and utilized

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Embodiment Construction

[0011] In order to further illustrate the structure and features of the present invention, the present invention will be further described below in conjunction with the embodiments and accompanying drawings. Such as figure 1 As shown, a four-junction semiconductor solar photovoltaic cell chip adopts the metal organic chemical vapor deposition (MOCVD) method, and the bottom cells (p-Ge, n-Ge) 2 are sequentially grown on the germanium (Ge) single wafer 1 as the substrate, forming Core layer (GaAs) 3, buffer layer (GaInAs) 4, barrier layer (n-GaInAs) 5, tunnel junction (n++AlGaAs, p++GaInAs) 6, barrier layer (p+GaInAs) 7, the Two-junction cell (p-GaInAs, n-GaInAs) 8, window layer (n+AlGaInP / AlInAs) 9, second tunnel junction (n++GaInAs, p++AlGaAs) 10, second barrier layer (p+ GaInP) 11, the third junction cell (p-GaInP, n-GaInP) 12, the second window layer (n+AlInP) 13, the third tunnel junction (n++ZnSe, p++ZnSe) 14, the third potential Barrier layer (n+ZnSe) 15, top cell (p-Zn...

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Abstract

The invention discloses a four-junction semiconductor solar photovoltaic cell chip, belonging to the field of semiconductor optoelectronic technique. The key of the invention is that a layer of ZnSe material with high forbidden band width is added as a top cell on the material system of a traditional multi-junction solar cell chip and can expand the absorption spectrum range of the solar cell chip, therefore, the problem that the traditional solar cell chip cannot sufficiently absorb the great quantity of energy flow distributed in the visible light and the ultraviolet band of the solar radiation is solved effectively, and the photoelectric conversion efficiency of the solar cell chip is enhanced.

Description

technical field [0001] The invention discloses a four-junction semiconductor solar photovoltaic cell chip structure, which belongs to the technical field of semiconductor optoelectronics. Background technique [0002] Solar cell chip is a kind of energy source with broad application prospect, which has three advantages of long life, environmental protection and flexibility. Solar cell chips have a long service life. As long as the sun exists, solar cell chips can be used for a long time after one investment; compared with thermal power generation and nuclear power generation, solar cell chips will not cause environmental pollution; A medium-sized power station of 10,000 kilowatts, as small as a solar cell chipset for one household, is unmatched by other energy sources. At present, the application of solar cell chips has entered the industry, commerce, agriculture, communications, household appliances and public facilities from the military and aerospace fields, especially i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/04H01L31/0352
CPCY02E10/50
Inventor 王智勇李建军尧舜
Owner BEIJING UNIV OF TECH
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