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Structure capable of reducing substrate back polymer

A polymer and substrate technology, applied in crystal growth, electrical components, post-processing details, etc., can solve the problems of reducing production efficiency and achieve the effect of ensuring uniformity

Active Publication Date: 2012-05-23
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This can greatly reduce productivity

Method used

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  • Structure capable of reducing substrate back polymer
  • Structure capable of reducing substrate back polymer
  • Structure capable of reducing substrate back polymer

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Embodiment Construction

[0049] The following combination Figure 2 ~ Figure 7 Through the preferred specific embodiments, the present invention will be described in detail.

[0050] The invention is suitable for various plasma processing devices, such as plasma etching or plasma assisted chemical vapor deposition. In the following, the application of plasma etching is taken as an example to illustrate the structure of the present invention. Such as figure 2 Shown is an embodiment of reducing the polymer on the back side of the substrate by inserting the conductor ring 13 in the present invention. In this embodiment, a substrate 2 and a susceptor 1 are provided in the plasma etching chamber for plasma etching of the substrate, and a substrate for mounting the substrate 2 is also provided on the upper surface 102 of the susceptor 1. Support 3; The substrate support 3 includes an electrostatic chuck 3 usually made of ceramic material and a DC electrode 4 embedded in the electrostatic chuck 3; The substr...

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Abstract

The invention provides a structure capable of reducing a substrate back polymer. The structure is arranged in a plasma treatment chamber and comprises a focusing ring which surrounds the peripheral side of a base. The focusing ring is provided with an extending part and a conductor ring which is arranged below the back of a substrate and is located between the peripheral side of the base and the extending part of the focusing ring, wherein the extending part at least partially extends below the edge of the back of the substrate. In the invention, the temperature of the back of the substrate is limited through the inserted conductor ring, and thereby, the thermal cracking of carbides on the focusing ring due to the high temperature and the polymer formation on the back of the substrate arelimited. The etching uniformity of the substrate is ensured while the substrate back polymer is effectively reduced.

Description

Technical field [0001] The invention relates to the field of plasma processing devices, and in particular to a structure that can reduce the polymer on the back of a substrate and ensure the uniformity of substrate processing. Background technique [0002] During the plasma etching process of the substrate, such as figure 1 As shown, a susceptor 1'is provided in the plasma etching chamber, a support 3'located on the surface of the susceptor 1', the support is usually an electrostatic chuck 3'(ESC), and is embedded in the electrostatic chuck 3'in the DC electrode 4'. The substrate 2'to be etched is mounted on the electrostatic chuck 3'. The plasma chamber also contains an insulating ring 11' arranged on the outer peripheral side of the base 1'. The insulating ring 11' can be made of quartz; the insulating ring 11' is located on the insulating ring 11' and is close to and surrounding the substrate 2'. Focus ring 12', the focus ring 12' is simultaneously arranged under the periphe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3065C30B33/12
Inventor 倪图强孟双徐朝阳
Owner ADVANCED MICRO FAB EQUIP INC CHINA