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Structure capable of reducing substrate back polymer

A polymer and substrate technology, applied in crystal growth, electrical components, post-processing details, etc., can solve the problems of reducing production efficiency and achieve the effect of ensuring uniformity

Active Publication Date: 2011-03-23
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This can greatly reduce productivity

Method used

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  • Structure capable of reducing substrate back polymer
  • Structure capable of reducing substrate back polymer
  • Structure capable of reducing substrate back polymer

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Embodiment Construction

[0049] The following combination Figure 2 to Figure 7 , the present invention is described in detail through preferred specific embodiments.

[0050] The invention is applicable to various plasma processing devices, such as plasma etching or plasma-assisted chemical vapor deposition and the like. The structure of the present invention will be described below by taking the application of plasma etching as an example. Such as figure 2 As shown, it is an embodiment of reducing the polymer on the backside of the substrate by inserting the conductor ring 13 in the present invention. In this embodiment, a substrate 2 and a base 1 are provided in the plasma etching chamber for performing plasma etching on the substrate, and a substrate for installing the substrate 2 is also provided on the upper surface 102 of the base 1 Support 3; the substrate support 3 includes an electrostatic chuck 3 usually made of ceramic material and a DC electrode 4 embedded in the electrostatic chuck 3...

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Abstract

The invention provides a structure capable of reducing a substrate back polymer. The structure is arranged in a plasma treatment chamber and comprises a focusing ring which surrounds the peripheral side of a base. The focusing ring is provided with an extending part and a conductor ring which is arranged below the back of a substrate and is located between the peripheral side of the base and the extending part of the focusing ring, wherein the extending part at least partially extends below the edge of the back of the substrate. In the invention, the temperature of the back of the substrate is limited through the inserted conductor ring, and thereby, the thermal cracking of carbides on the focusing ring due to the high temperature and the polymer formation on the back of the substrate are limited. The etching uniformity of the substrate is ensured while the substrate back polymer is effectively reduced.

Description

technical field [0001] The invention relates to the field of plasma processing devices, in particular to a structure capable of reducing polymers on the back of a substrate and ensuring the uniformity of processing the substrate. Background technique [0002] During plasma etching of substrates, such as figure 1 As shown, a base 1' is provided in the plasma etching chamber, a support 3' located on the surface of the base 1', the support is usually an electrostatic chuck 3' (ESC), and a surface embedded in the electrostatic chuck DC electrode 4' in 3'. A substrate 2' to be etched is mounted on the electrostatic chuck 3'. The plasma chamber also includes an insulating ring 11' disposed on the outer peripheral side of the susceptor 1', and the insulating ring 11' can be made of quartz; Focusing ring 12', this focusing ring 12' is arranged under the back side peripheral part of substrate 2' at the same time, promptly between the upper surface of this focusing ring 12' and the...

Claims

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Application Information

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IPC IPC(8): H01L21/3065C30B33/12
Inventor 倪图强孟双徐朝阳
Owner ADVANCED MICRO FAB EQUIP INC CHINA