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Method for fabricating circuit substrate assembly and power electronics module

A technology for circuit substrates and insulating substrates, applied in printed circuit parts, circuits, printed circuits, etc., can solve the problems of low thermal conductivity of ceramics, low thermal conductivity of metals, low mechanical bending load capacity, etc.

Active Publication Date: 2011-03-30
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the thermal conductivity of ceramics is lower than that of metals
This is the reason for striving for relatively thin ceramic-based insulating substrates, but with low mechanical bending load capacity

Method used

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  • Method for fabricating circuit substrate assembly and power electronics module
  • Method for fabricating circuit substrate assembly and power electronics module
  • Method for fabricating circuit substrate assembly and power electronics module

Examples

Experimental program
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Embodiment Construction

[0045] now refer to figure 1 , shows a vertical cross-sectional view of an assembly comprising an insulating substrate 2 soldered to a metal circuit substrate 1 , such as a metal plate or a heat sink, by means of an anchoring structure 3 . To this end, the metal substrate 1 may include a metal surface 1t configured to be flat or concave. When constructing the circuit substrate as a metal base plate for power semiconductor modules, even a slight protruding bend of the base plate is used to apply the injected thermal compound to spread the contact pressure more evenly over the heat sink, thereby minimizing the thermal Heat transfer resistance when the sink is mounted on the base plate. Instead of a pure metal substrate 1 any other type of circuit substrate can be used which is soldered on at least one side to the insulating substrate 2 when it comprises a solderable surface metallization. Where the circuit substrate is configured as a heat sink, it may have cooling fins and / or...

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PUM

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Abstract

A method for fabricating a circuit substrate assembly and a power electronics module. The invention relates to a method for fabricating a power semiconductor module by providing a circuit substrate with a metal surface and an insulating substrate, wherein the insulating substrate comprises an insulation carrier featuring a bottom side provided with a bottom metallization layer. An anchoring structure is provided comprising a plurality of oblong pillars each featuring a first end facing away from the insulation carrier, at least a subset of the pillars being distributed over the anchoring structure in its entirety, it applying for each of the pillars of the subset that from a sidewall thereof no or a maximum of three elongated bonding webs each extend to a sidewall of another pillar where they are bonded thereto. The anchoring structure is positioned between the insulation carrier and metal surface, after which the metal surface is soldered to the bottom metallization layer and anchoring structure by means of a solder packing all interstices between the metal surface and bottom metallization layer with the solder.

Description

technical field [0001] The present invention relates to circuit substrate assemblies. Background technique [0002] Circuit substrate assemblies are widely used, for example, in power electronic modules (PEMs). Power electronics modules are semiconductor modules used in power electronics circuits. Power electronic modules are commonly used in vehicular, railway and industrial applications, for example in inverters or rectifiers. People also find applications in the form of energy generation and transmission. Semiconductor components included in a power electronic module may include, for example, semiconductor chips including insulated gate (IGBT) or metal oxide field effect transistors (MOSFET). These IGBT and MOSFET semiconductor chips vary with their voltage and current handling capabilities. Some power electronic modules also include additional semiconductor diodes (ie freewheeling diodes) in the semiconductor components for overvoltage protection. Such a semiconduct...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/50H01L21/58H01L23/12
CPCH05K3/0061H01L2924/0781H01L24/29H01L2224/73265H01L2224/32225H01L2224/8584H01L24/28H01L24/39H01L2224/48091H01L2924/01327H01L2924/01046H01L2924/01004H05K3/341H01L23/49811H01L2224/8384H01L2224/4846H01L2924/01028H01L24/48H01L2924/13055H01L25/072H01L2924/2076H01L2924/01079H01L23/24H01L2224/29339H01L2924/01014H01L2224/45015H01L2224/48472H01L23/3735H01L2924/01013H01L2924/13091H05K1/0306H01L2924/014H01L24/49H05K2201/0373H01L2924/01019H05K1/0203H01L2924/01068H01L2224/49H01L2924/0102H01L2924/1301H01L2924/1306H01L2924/13034H01L2924/13062H01L2924/12043H01L2924/181H01L24/73H01L2924/00014H01L2224/8385H01L2224/83801H01L2224/371H01L2224/84801H01L2224/8484H01L2224/8485H01L2224/40225H01L24/37H01L24/84H01L2924/3512H01L2924/00H01L2224/48227H01L2924/00012H01L2224/45099H01L2224/37099H01L2224/73221
Inventor O·霍尔费尔德J·格利希R·巴耶勒
Owner INFINEON TECH AG
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