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Multilayer interconnection structure and forming method thereof

A technology of multi-layer interconnection and protective layer, applied in the manufacture of electrical components, electric solid-state devices, semiconductor/solid-state devices, etc. Good results

Inactive Publication Date: 2011-03-30
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] The problem solved by the invention is to prevent the interlayer insulating layer from being polluted in the subsequent process

Method used

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  • Multilayer interconnection structure and forming method thereof
  • Multilayer interconnection structure and forming method thereof
  • Multilayer interconnection structure and forming method thereof

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Embodiment Construction

[0024] In the following description, many specific details are explained in order to fully understand the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar popularizations without violating the connotation of the present invention. Therefore, the present invention is not limited by the specific implementation disclosed below.

[0025] Secondly, the present invention uses schematic diagrams for detailed description. When describing the embodiments of the present invention in detail, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, and the schematic diagram is only an example, which should not be limited here. The scope of protection of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in actual production.

[0026] The existing proc...

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Abstract

The invention relates to a multilayer interconnection structure and a forming method thereof. The forming method of the multilayer interconnection structure comprises the following steps: providing a semiconductor substrate with a metal wiring layer; forming a barrier layer, an interlayer insulation layer, a first protective layer and a second protective layer on the metal wiring layer; forming a double embedding space for exposing the metal wiring layer in the barrier layer, the interlayer insulation layer, the first protective layer and the second protective layer; forming a metal layer which is filled in the double embedding space and positioned on the surface of the second protective layer; and removing part of metal layer and 1 / 4 to 1 / 2 of second protective layer in thickness to form a metal plug. The invention has the advantages that the interlayer insulation layer can be prevented from being polluted in the subsequent processes to cause defects formed in the interlayer insulation layer and failure of devices due to electric leakage.

Description

Technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a multilayer interconnection structure and a method of forming the same. Background technique [0002] With the rapid development of semiconductor device manufacturing technology, semiconductor devices have a deep submicron structure. As the number of devices contained in integrated circuits continues to increase, the size of devices is also continuously reduced due to the improvement of integration. The high-performance and high-density connections between devices are not only performed in a single interconnection layer, but also in multiple layers. Interconnect between. Therefore, a multilayer interconnection structure is generally provided in which a plurality of interconnection layers are stacked on each other with an interlayer insulating film interposed therebetween for connecting semiconductor devices. In particular, a multilayer interconnection structure formed by ...

Claims

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Application Information

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IPC IPC(8): H01L21/768H01L23/522H01L23/535
Inventor 王琪
Owner SEMICON MFG INT (SHANGHAI) CORP