Method for forming semiconductor device

Abstract

A method for forming a semiconductor device comprises the following steps: forming a first gate oxidation layer on a semiconductor substrate; forming a photoresist layer on the first gate oxidation layer and exposing the first gate oxidation layer of a low-pressure MOS area after exposure and development processes; placing the semiconductor substrate into an etching machine; taking the photoresist layer as the mask, firstly placing the semiconductor substrate into the photoresist layer and etching and removing the first gate oxidation layer of the low-pressure MOS area; taking the semiconductor substrate out of a buffering, oxidizing and etching agent groove, placing the semiconductor substrate into a sulfuric acid groove and etching and removing the photoresist layer; and after taking the semiconductor substrate out of the etching machine, forming second gate oxidation layers on the first gate oxidation layer of a high-pressure MOS area and the semiconductor substrate of the low-pressure MOS area, wherein the semiconductor substrate is divided into the high-pressure MOS area and the low-pressure MOS area; and the machine comprises the buffering, oxidizing and etching agent grooveand the sulfuric acid groove. The method saves time, improves the etching efficiency and can solve the problem that the photoresist residue can not be removed.

Description

technical field [0001] The present invention relates to a method of forming a semiconductor device. Background technique [0002] In semiconductor technology, even though the device size continues to shrink, it is still desirable to improve the performance of transistors, and it is also desirable to manufacture integrated circuit semiconductor devices that combine low, high, and medium voltage applications. For example, integrated circuits (hereinafter referred to as driver ICs) used to drive image sensors, LCDs, and printed magnetic heads, etc., are composed of ICs with strong withstand voltage between the drain and source that operate at a power supply voltage above +V. The drive output unit of the high-voltage MOS transistor and the logic unit of the control drive output unit of the low-voltage MOS transistor that can be used at a power supply voltage of several volts or less have poor drain withstand voltage capability. Such integrated circuits are often referred to as ...

AI Technical Summary

Problems solved by technology

[0005] The problem solved by the present invention is to provide a method for forming a semiconductor device, which prevents the problem that the photoresist residue cannot be removed due to long production time and low efficiency.

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