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Memory and sensitive amplifier

A technology of sense amplifier and pre-charge, applied in the field of memory and sense amplifier, can solve the problem of output data error and so on

Active Publication Date: 2011-04-13
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The present invention solves the problem that the output data error is caused by the increase of the data voltage when the pre-charging of the bit line is completed in the existing sensitive amplifier

Method used

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  • Memory and sensitive amplifier
  • Memory and sensitive amplifier

Examples

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Embodiment Construction

[0024] The embodiment of the present invention adopts the method of voltage kick back to couple the data voltage that affects the output data and the data line voltage that affects the bit line current. The rise of the data voltage is also suppressed due to the interaction of the data voltage and the data line voltage.

[0025] The sense amplifier of the embodiment of the present invention comprises:

[0026] The precharging unit charges the data line node when the bit line is precharged.

[0027] The bit line adjustment unit charges the bit line node by the data line node when the bit line is precharged; outputs the bit line current after the bit line is precharged.

[0028] The current mirror unit has an input end connected to the data line node, an output end connected to the data node, and performs mirroring on the bit line current to obtain a mirrored current.

[0029] The comparison unit increases the voltage of the data node when the mirror current is greater than the...

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PUM

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Abstract

The invention discloses a memory and a sensitive amplifier, wherein the sensitive amplifier comprises a pre-charging unit, a bit line adjusting unit, a current mirror unit, a comparison unit, a reverse unit, a bias unit and an output unit, wherein the reverse unit is connected between the input end and the output end of the current mirror unit and is coupled with the voltage of a data wire node and the voltage of a data node; and the bias unit is used for biasing the voltage of the data node to the preset voltage value when the bit line is pre-charged. The memory and the sensitive amplifier solve the problem that output data are mistaken because the voltage of the data rises when the pre-charging of the bit line is finished.

Description

technical field [0001] The invention relates to a memory circuit, in particular to a memory and a sensitive amplifier. Background technique [0002] A sense amplifier (SA, Sense Amplifier) ​​is an important component of a memory, and directly affects the reading speed of the memory. Sense amplifiers sense small signal changes on bit-lines and amplify the small signal changes to obtain data stored on memory cells. Before sensing small signal changes on the bit-line, the bit-line adjustment unit of the sense amplifier will adjust the bit-line voltage to a fixed value, so that the bit-line voltage can be stabilized as soon as possible, and then it can sense a stable voltage when reading. bit line current. [0003] figure 1 It is a circuit diagram of an existing sense amplifier of a memory, including: a precharge unit 11 , a bit line adjustment unit 12 , a current mirror unit 13 , a comparison unit 14 , an output unit 15 and a pull-down unit 16 . [0004] Before reading the ...

Claims

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Application Information

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IPC IPC(8): G11C7/06G11C7/12
Inventor 杨光军
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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