Method for forming self-aligned metal silicide
A metal silicide and self-alignment technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as uneven distribution of alloy elements, improve reliability, prevent the diffusion and intrusion of nickel elements, and avoid The effect of uneven distribution of alloying elements
Inactive Publication Date: 2012-10-03
SEMICON MFG INT (SHANGHAI) CORP +1
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[0009] The invention provides a method for forming a self-aligned metal silicide, which avoids the problem of uneven distribution of alloy elements in the metal layer, prevents the diffusion and intrusion of nickel elements in the central region of the semiconductor substrate, and improves the reliability of the device
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[0033] The invention provides a method for forming a self-aligned metal silicide. The method forms at least two layers of metal layers in multiple stages, and the power used in the formation process of each layer of metal layers increases sequentially, avoiding the problem of alloy elements in the metal layers The problem of uneven distribution prevents the problem of nickel element diffusion and intrusion in the central region of the semiconductor substrate, and improves the reliability of the device.
[0034] In order to make the methods, features and advantages of the present invention more comprehensible, the specific implementation manners of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0035] The present invention provides a method for forming a self-aligned metal silicide, comprising: providing a semiconductor substrate with at least a silicon region on the surface of the semiconductor substrate; forming at leas...
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The invention relates to a method for forming a self-aligned metal silicide, which comprises the following steps of: providing a semiconductor base, wherein the surface of the semiconductor base is provided with at least one silicon area; forming at least two metal layers on the semiconductor base, wherein the sputtering powers of the at least two metal layers are sequentially increased with the sequence of forming each metal layer; carrying out an annealing process on the semiconductor base, and generating a metal silicide through the reaction of the silicon area and the at least two metal layers; and etching to remove the unreacted parts in the at least two metal layers. The invention avoids the problem of nonuniform distribution of alloy elements in the metal layers, prevents the problems of diffusion and intrusion of nickel elements in the central area of the semiconductor base and improves the reliability of devices.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming a self-aligned metal silicide. Background technique [0002] In semiconductor manufacturing technology, metal silicide is widely used in source / drain contacts and gate contacts to reduce contact resistance due to its low resistivity and good adhesion with other materials. Metal with high melting point reacts with silicon to form metal silicide, and a low-resistivity metal silicide can be formed through one-step or multi-step annealing process. With the improvement of the semiconductor process level, especially at the technology node of 90nm and below, in order to obtain lower contact resistance, nickel and nickel alloys have become the main materials for forming metal silicides. [0003] A method for forming a salicide is disclosed in the published Chinese patent application No. 200780015617.9, in which nickel alloy is selected as the material for for...
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IPC IPC(8): H01L21/28H01L21/285H01L21/82
Inventor 杨瑞鹏孔祥涛聂佳相胡宇慧
Owner SEMICON MFG INT (SHANGHAI) CORP